A new sub-micron trench cell concept in ultrathin wafer technology for next generation 1200 V IGBTs

Jaeger, Christian; Philippou, Alexander; Ilei, Antonio Ve; Laven, Johannes G.; Andreas, Hartl

doi:10.23919/ispsd.2017.7988895

Cited by 34 publications

(26 citation statements)

References 5 publications

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“…The wafer thicknesses of devices have been approaching to the theoretical limits for the rated voltage class. A latest trend of the ndrift design is towards higher resistivity and thinner thickness in order to ensure both high blocking capability and low overall loss [32]. Our approach for a deep n-buffer structure is the introduction of Controlling charge carrier Plasma Layer (CPL) ( Fig.…”

Section: Improving Usabilitymentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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Section: Improving Usabilitymentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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“…This effect increases the drift region cathode side carrier concentration and enables a p-i-n diode like carrier profile. The same effect is used in 1D scaling of mesa width [6], 2D and 3D scaling of cathode cells [3,4] as well as deep sub-micron designs [7]. However, the IE effect also results in non-saturation of the MOS channel current, leading to significant degradation of short circuit withstand capability [8,9].…”

Section: Recommended For Publication By Associate Editormentioning

confidence: 99%

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Luo

Long

Sweet

et al. 2018

IEEE Trans. Electron Devices

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Abstract-3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results in an enhancement of current gain of the inherent thyristor action which reduces the forward voltage drop even more than that of a scaled Trench IGBT (TIGBT). For identical switching losses, at a scaling factor k=3, the forward voltage drop is reduced by 20% at 300K and 30% at 400K when compared to the conventional TCIGBT (k=1). Most importantly, despite its lower conduction losses than an equivalent TIGBT, a scaled TCIGBT structure can maintain its short circuit capability, due to the additional scaling principle applied to the n-well and p-well regions, maintaining the self-clamping feature. Thus, TCIGBT is a more efficient chip-for-chip, reliable replacement of a TIGBT for energy savings in applications.Index Terms-IGBT, Clustered IGBT, Vce(sat) -Eoff trade-off, power semiconductor device, scaling rule, short circuit capability, self-clamping feature.

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“…Different approaches have been suggested in the literature (e.g. [7][8][9][10][11][12][13]). A very promising approach is the MPT concept with sub-µm mesa widths to increase the carrier confinement and increased channel width to further lower the on-state voltage.…”

Section: Advanced Concepts For Power-loss Reductionmentioning

confidence: 99%

Progress in IGBT development

Niedernostheide

Schulze

Laska

et al. 2018

IET Power Electronics

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Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed. (a) Turn-off transients of a 15 A-1200 V-IGBT with an FS layer created by a threestage proton implantation (T = 125°C), (b) Maximum DC-link voltage V DC,max at which the IGBT can be turned off softly

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A new sub-micron trench cell concept in ultrathin wafer technology for next generation 1200 V IGBTs

Cited by 34 publications

References 5 publications

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Progress in IGBT development

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