A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications

Zhang, Fanlu; Zhang, Xutao; Li, Ziyuan; Yi, Ruixuan; Li, Zhe; Wang, Naiyin; Xu, Xiaoxue; Azimi, Zahra; Li, Li; Lysevych, Mykhaylo; Gan, Xuetao; Lu, Yuerui; Tan, Hark Hoe; Jagadish, Chennupati; Fu, Lan

doi:10.1002/adfm.202103057

Cited by 30 publications

(30 citation statements)

References 36 publications

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“…As shown in the literature, nanowires have versatile application possibilities in electrical, , optical, , and sensor , devices. With this study, we demonstrate the sensing capability of single nanowires by using correlative microscopy techniques.…”

Section: Discussionmentioning

confidence: 98%

Sensing Capabilities of Single Nanowires Studied with Correlative In Situ Light and Electron Microscopy

et al. 2022

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Modern devices based on modular designs require versatile and universal sensor components which provide an efficient, sensitive, and compact measurement unit. To improve the space capacity of devices, miniaturized building elements are needed, which implies a turning away from conventional microcantilevers toward nanoscale cantilevers. Nanowires can be seen as high-quality resonators and offer the opportunity to create sensing devices on small scales. To use such a one-dimensional nanostructure as a resonant cantilever, a precise characterization based on the fundamental properties is needed. We present a correlative electron and light microscopy approach to characterize the pressure and environment sensing capabilities of single nanowires by analyzing their resonance behavior in situ. The high vacuum in electron microscopes enables the characterization of the intrinsic vibrational properties and the maximum quality factor. To analyze the damping effect caused by the interaction of the gas molecules with the excited nanowire, the in situ resonance measurements have been performed under non-high-vacuum conditions. For this purpose, single nanowires are mounted in a specifically designed compact gas chamber underneath the light microscope, which enables direct observation of the resonance behavior and evaluation of the quality factor with dependence of the applied gas atmosphere (He, N 2 , Ar, Air) and pressure level. By using the resonance vibration, we demonstrate the pressure sensing capability of a single nanowire and examine the molar mass of the surrounding atmosphere. Together this shows that even single nanowires can be utilized as versatile nanoscale gas sensors.

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Section: Discussionmentioning

confidence: 98%

Sensing Capabilities of Single Nanowires Studied with Correlative In Situ Light and Electron Microscopy

et al. 2022

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“…Through strong light confinement for obtaining sufficient gain, ZnO NWs lasers could be well optimized to realize lasing emissions with a low light loss. [49,50]…”

Section: Lasing Analysis Of Zno Nws Without and With Pt Metalmentioning

confidence: 99%

Enhanced Ultraviolet Spontaneous and Lasing Emission Through Interface Engineering of Patterned Vertically Aligned ZnO Nanowires

Guo

Zhao

et al. 2022

Adv Materials Inter

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Among the most studied nanomaterials, 1D nanowires (NWs) with ultra-high intrinsic photoelectric gain, multiple array light confinement, and subwavelength size effects could be suitable for designing structures with advanced performance, which fully satisfy the practical needs. [9][10][11][12] Due to the small size and self-formed cavity, semiconductor NWs have attracted more and more attention to fabricating nanostructured lasers, [13] which could provide natural cavities for low size lasers. [15][16][17][18] Among all the low dimensional materials, ZnO is considered to be a promising candidate as a UV media considering its wide bandgap (3.37 eV) and large exciton binding energy of 60 meV, which is suitable for fabricating room temperature optoelectronic devices. [19][20][21] Compared with GaN (25 meV), the large exciton binding energy of ZnO material enables to achieve room temperature optoelectronic devices with high stability. At present, optically pumped UV lasing action in ZnO was realized as the gain medium with single forms such as microwires, microspheres, nanoribbons, nanowires, etc. [22][23][24][25] and the preparation methods could be thermal oxidation, chemical vapor deposition (CVD), hydrothermal reaction, magnetron sputtering, atomic layer deposition (ALD), pulsed laser Due to optical radiation losses, a high pumping threshold or low temperature is necessary for driving ultraviolet (UV) light emission devices, and surface/interface engineering method is one of the alternatives for tailoring photon behavior. Here, a fully integrated nanowire (NW) laser device is thus constructed, resulting in suppressed interface light loss. Enhanced UV spontaneous and lasing emission is observed due to adequate gain to compensate for the optical loss. Applying well-aligned ZnO NW cavities, optimized UV spontaneous and lasing emission is realized, supporting an effective optical path through interface engineering for photon extraction. As proven by experimental results, through interface integration with Pt metal for ZnO NWs, 170% photoluminescence (PL) emission enhancement accompanied by 145% broaden emission spectra width in the UV region is obtained. It is also observed that more lasing modes appeare when excitation density is high enough, lasing modes interspacing of around 3 nm, and full width at half maximum of the modes <0.003 eV for the lasing device could be observed. The detailed optical simulation is proposed to understand the physical origin of internal mechanisms contributing to the optimized spontaneous and stimulated lasing emission behaviors.

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“…[5] Some studies attempted to extend the operational wavelengths of binary nanowires through heterostructures such as quantum dots, quantum wells, and core/shell structures. [6][7][8][9][10][11] However, the thickness and lattice mismatch of the heterostructure should be minimized to avoid the formation of detrimental straininduced structural defects. As an alternative, ternary nanowires such as InGaAs can be used to tune the emission wavelength from 850 to 3500 nm while simultaneously minimizing the strain.…”

Section: Introductionmentioning

confidence: 99%

Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

Azimi

Gopakumar

et al. 2022

Advanced Optical Materials

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Catalyst‐free InGaAs nanowires are promising building blocks for optoelectronic devices operating at telecommunication wavelengths. Despite progress, the applications of InGaAs nanowires remain limited due to their high density of surface states that degrade their optical properties. Here, InGaAs nanowires with superior optical properties are achieved by effectively suppressing their surface states with an InP passivation shell. Optimal InP shell growth conditions and thickness to maximize the minority carrier lifetime are identified. The photoluminescence intensity of these passivated InGaAs nanowires is up to three orders of magnitude higher than that of their bare counterparts. Moreover, a long minority carrier lifetime of up to ≈13 ns is measured with these passivated nanowires at room temperature. Optimal passivation of InGaAs nanowires with an emission wavelength of 1530 nm results in an ultra‐low surface recombination velocity of ≈280 cm s−1. In addition to the shell, the crystal structure of these nanowires plays an important role in the luminescence intensity. Combined cathodoluminescence mapping and high‐resolution transmission electron microscopy along the nanowires reveal significantly lower emission intensities in wurtzite predominant sections of the nanowires than zinc blende predominant ones.These insights on the optimal passivation of InGaAs provide directions for engineering high‐performance nanoscale‐devices in the telecommunication wavelength.

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A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications

Cited by 30 publications

References 36 publications

Sensing Capabilities of Single Nanowires Studied with Correlative In Situ Light and Electron Microscopy

Sensing Capabilities of Single Nanowires Studied with Correlative In Situ Light and Electron Microscopy

Enhanced Ultraviolet Spontaneous and Lasing Emission Through Interface Engineering of Patterned Vertically Aligned ZnO Nanowires

Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

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