Light-induced halide segregation limits the bandgap tunability of mixed-halide perovskites for tandem photovoltaics. Here we report that light-induced halide segregation is strain-activated in MAPb(I1−xBrx)3 with Br concentration below approximately 50%, while it is intrinsic for Br concentration over approximately 50%. Free-standing single crystals of CH3NH3Pb(I0.65Br0.35)3 (35%Br) do not show halide segregation until uniaxial pressure is applied. Besides, 35%Br single crystals grown on lattice-mismatched substrates (e.g. single-crystal CaF2) show inhomogeneous segregation due to heterogenous strain distribution. Through scanning probe microscopy, the above findings are successfully translated to polycrystalline thin films. For 35%Br thin films, halide segregation selectively occurs at grain boundaries due to localized strain at the boundaries; yet for 65%Br films, halide segregation occurs in the whole layer. We close by demonstrating that only the strain-activated halide segregation (35%Br/45%Br thin films) could be suppressed if the strain is properly released via additives (e.g. KI) or ideal substrates (e.g. SiO2).

Two-dimensional (2D) molybdenum disulfide (MoS 2 )h olds great promise in electronic and optoelectronic applicationso wing to its unique structure and intriguing properties. The intrinsic defects such as sulfur vacancies (SVs) of MoS 2 nanosheets are found to be detrimental to the device efficiency.T om itigate this problem, functionalization of 2D MoS 2 using thiols has emerged as one of the key strategies for engineering defects. Herein,w ed emonstrate an approach to controllably engineer the SVs of chemically exfoliated MoS 2 nanosheets using as eries of substituted thio-phenols in solution. The degree of functionalization can be tuned by varying the electron-withdrawing strength of substituents in thiophenols. We find that the intensity of 2LA(M) peak normalized to A 1g peak strongly correlates to the degree of functionalization. Our resultsp rovide as pectroscopici ndicatort om onitora nd quantify the defecte ngineering process. This methodo fM oS 2 defectf unctionalization in solution also benefitst he further exploration of defect-free MoS 2 for aw ide range of applications.[a] Dr.

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Diffraction techniques are ubiquitous in electron microscopy, especially in Transmission Electron Microscopy (TEM). TEM enables the use of an objective aperture placed in the diffraction plane to increase contrast in bright-field or dark-field mode. On the other hand, Scanning Electron Microscopy (SEM) also offers several diffraction techniques, such as EBSD and TKD. However, the exploration of on-axis transmission diffraction is still in its infancy. In recent years there have been several developments in this direction [1-3] to take advantage of the unique features of SEM, such as low acceleration voltages, large chamber size, and strong topographic contrast. However, further developments to also include an aperture system for dedicated diffraction contrast imaging have not been realized so far.

Modern devices based on modular designs require versatile and universal sensor components which provide an efficient, sensitive, and compact measurement unit. To improve the space capacity of devices, miniaturized building elements are needed, which implies a turning away from conventional microcantilevers toward nanoscale cantilevers. Nanowires can be seen as high-quality resonators and offer the opportunity to create sensing devices on small scales. To use such a one-dimensional nanostructure as a resonant cantilever, a precise characterization based on the fundamental properties is needed. We present a correlative electron and light microscopy approach to characterize the pressure and environment sensing capabilities of single nanowires by analyzing their resonance behavior in situ. The high vacuum in electron microscopes enables the characterization of the intrinsic vibrational properties and the maximum quality factor. To analyze the damping effect caused by the interaction of the gas molecules with the excited nanowire, the in situ resonance measurements have been performed under non-high-vacuum conditions. For this purpose, single nanowires are mounted in a specifically designed compact gas chamber underneath the light microscope, which enables direct observation of the resonance behavior and evaluation of the quality factor with dependence of the applied gas atmosphere (He, N 2 , Ar, Air) and pressure level. By using the resonance vibration, we demonstrate the pressure sensing capability of a single nanowire and examine the molar mass of the surrounding atmosphere. Together this shows that even single nanowires can be utilized as versatile nanoscale gas sensors.

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Flexible electrodes using nanowires (NWs) suffer from challenges of long-term stability and high junction resistance which limit their fields of applications. Welding via thermal annealing is a common strategy to enhance the conductivity of percolated NW networks, however, it affects the structural and mechanical integrity of the NWs. In this study we show that the decoration of NWs with an ultrathin metal oxide is a potential alternative procedure which not only enhances the thermal and chemical stability but, moreover, provides a totally different mechanism to reduce the junction resistance upon heat treatment. Here, we analyze the effect of SnOx decoration on the conductance of silver NWs and NW junctions by using a four-probe measurement setup inside a scanning electron microscope. Dedicated transmission electron microscopy analysis in plan-view and cross-section geometry are carried out to characterize the nanowires and the microstructure of the junctions. Upon heat treatment the junction resistance of both plain silver NWs and SnOx-decorated NWs is reduced by around 80%. While plain silver NWs show characteristic junction welding during annealing, the SnOx-decoration reduces junction resistance by a solder-like process which does not affect the mechanical integrity of the NW junction and is therefore expected to be superior for applications.