A new recombination model for device simulation including tunneling

Hurkx, G.A.M.; Klaassen, D.B.M.; Knuvers, M.P.G.

doi:10.1109/16.121690

Cited by 820 publications

(429 citation statements)

References 10 publications

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“…Willemen 34 was the first in successfully fitting the light J-V of tandem solar cells using computer modeling with some experimental support. He incorporated the trap assisted tunneling ͑TAT͒ recombination formalism developed by Hurkx et al 36 to model dark J-V of highly doped step junctions. He found that Voc increased but the predicted J-V curves were still quite off from the measured ones.…”

Section: Dark J-v Characteristic Curves Of N-i-p Tandem Recombinmentioning

confidence: 99%

Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

Sturiale

Li²,

Rath³

et al. 2009

Journal of Applied Physics

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The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions: two with an exponential dependence and a third where the current grows more slowly with the applied voltage. In the first exponential region the current is entirely controlled by recombination through gap states of the top cell. In the second exponential region the current is controlled by the mixture of recombination through gap states of both the top and bottom cells and by free carrier diffusion along the a-Si: H intrinsic layer. In the third region the onset of the electron space charge limited current on the a-Si: H top cell can be observed along with some other mechanisms that are discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole pairs generated under illumination in the top and bottom cells. The dark current at high forward voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the recombination junction.

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Section: Dark J-v Characteristic Curves Of N-i-p Tandem Recombinmentioning

confidence: 99%

Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

Sturiale

Li²,

Rath³

et al. 2009

Journal of Applied Physics

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“…13 The trap assisted tunnel ͑TAT͒ effect can also work. 11 Using previously reported formulas, 11,13 we calculated the enhancements to the electron emission and trap rates from the ͑ϩ͉0͒ level,…”

mentioning

confidence: 99%

Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories

Umeda

Okonogi²,

Ohyu³

et al. 2006

Applied Physics Letters

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“…This process occurs when an electron tunnels to a trap in the band gap and is then thermally excited out of the trap. This can result in a temperature dependent subthreshold swing voltage as well as temperature dependent threshold shifts [24,[44][45][46]. It also increases the subthreshold swing voltage by preventing the tunneling from turning off.…”

Section: Other Design Issues To Avoidmentioning

confidence: 99%