2017
DOI: 10.1016/j.nanoen.2017.06.017
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A new protocol toward high output TENG with polyimide as charge storage layer

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Cited by 136 publications
(85 citation statements)
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References 42 publications
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“…However, after introducing a PS dielectric layer between PVDF and the bottom electrode, the decay time of the TENG increased to 44 h. The dramatically enhanced decay time clearly demonstrates that the massive traps in the PS sublayer can powerfully restrain and efficiently store the flowing electrons. Most likely, the polyimide (PI) dielectric layer reported by Feng et al also functioned as a charge storage layer and improved the device outputs by one order of magnitude, as elucidated in Figure d . In this work, the authors also selected PET and paper as the control groups to test charge storage capability.…”
Section: Materials Optimization For High Triboelectric Performancementioning
confidence: 96%
See 2 more Smart Citations
“…However, after introducing a PS dielectric layer between PVDF and the bottom electrode, the decay time of the TENG increased to 44 h. The dramatically enhanced decay time clearly demonstrates that the massive traps in the PS sublayer can powerfully restrain and efficiently store the flowing electrons. Most likely, the polyimide (PI) dielectric layer reported by Feng et al also functioned as a charge storage layer and improved the device outputs by one order of magnitude, as elucidated in Figure d . In this work, the authors also selected PET and paper as the control groups to test charge storage capability.…”
Section: Materials Optimization For High Triboelectric Performancementioning
confidence: 96%
“…In addition to surface engineering, modulating the properties of bulk friction materials to enhance TENG performance has drawn extensive interest from researchers, and the methods for achieving this objective mainly include doping nanomaterials and inserting sublayers . Both of these approaches and their influence on the output performance of TENGs will be presented in this part.…”
Section: Materials Optimization For High Triboelectric Performancementioning
confidence: 99%
See 1 more Smart Citation
“…行控制. Feng等 [40] 图 6 (a) Pdop-F的合成制备以及修饰过程; (b) PFTS在样品 表面的修饰过程; (c) 摩擦起电电压信号; (d) 摩擦起电电荷 密度 [40] (网络版彩图) [45] (网络版彩图) 图 7 (a) 多巴胺的修饰对表面润湿性的影响; (b) 多巴胺表 面修饰对固液界面摩擦起电电压的影响 [41] (网络版彩图) 图 10 湿度对不同摩擦副表面摩擦电荷的影响 [46] (网络版 彩图) (c) 不同湿度下固-液界面摩擦起电电压和(d)固-固界面摩擦 起电电压 [47] (网络版彩图) 图 12 温度 [48] (a)、低真空 [49] (b)和高真空(c, d)对摩擦起电 的影响(网络版彩图) (e) PVDF和Nylon接触前3 s的电荷积累测试 [50] (网络 版彩图)…”
Section: 的组分会发生变化 从而能够对材料摩擦起电性能进unclassified
“…[15][16][17][18] Strategies to enhance the output performance of TENGs are generally based on increasing of the transferred charge density between two contacted surfaces, as the electric potential is critically dependent on it. [19][20][21][22] Although the principle of contact-electrification has long been studied, [23][24][25] but whose mechanisms are still unclear. Recently, surface-states and electron cloud/potential models have been employed to explain the contact electrification mechanism.…”
mentioning
confidence: 99%