A new prediction method for ReRAM data retention statistics based on 3D filament structures

Abstract

Instead of wide distributed resistance for a single bit, we introduce non-fluctuating physical parameters, filament diameter and packing factor (corresponding to oxygen vacancy concentration) to describe ReRAM bit. The quantitative 3D percolation model is developed based on direct observation of the filament structure and hopping conduction, which is confirmed with ultra-low temperature (30 K) measurement. Moreover, we provide a simulation method to obtain quantitative filament diameter, packing factor and to do the prediction of the resistance distribution after retention, which is verified with experiment.

Conduction mechanism and synaptic behaviour of interfacial switching AlOσ-based RRAM

“…Resistive random-access memory (RRAM) which stores data via resistive switching (RS) has been considered as a promising candidate for next-generation memory due to its simple structure [1,2], embedded memory [3], multiple states [4], smaller size than electric charge based memory devices [5] and outstanding electric characteristics such as low-power consumption. Due to these advantages, recent RRAM devices have been widely studied for applications in neuromorphic computing [6][7][8].…”

Electrode-induced digital-to-analog resistive switching in TaOx-based RRAM devices

“…Resistive random access memory (RRAM) devices have attracted great interest due to their outstanding electrical performances [1,2] and wide application opportunities, such as mass storage [3], embedded memory [4], physical unclonable function [5], etc. Recently, RRAM devices have been widely studied as synaptic devices for neuromorphic computing applications [6].…”

“…However, in most filamentary RRAM devices, abrupt resistance transitions are often observed, especially in the SET process. TaO x -based RRAM devices have shown superior endurance (>10 12 ) [9] and excellent uniformity [10] and they have also been commercially manufactured [4]. However, inert metals, including Pt and Ir, have to be used to obtain high digital resistive switching (DRS) performance [9][10][11].…”