A New Precursor Route to Semiconducting Zinc Oxide

Althagafi, Talal M.; Baroot, Abbad Al; Grell, Martin

doi:10.1109/led.2016.2603520

Cited by 9 publications

(4 citation statements)

References 15 publications

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“…(1) then allows calculation of carrier mobilities, results are summarised in Table 1. We find higher mobilities in ZnO than in rrP3HT; our results overlap with previous reports of mobilities in water-gated rrP3HT [10,33] and precursor-route ZnO TFTs [14,30,34].…”

Section: Figs 3-5 Show Three Control Experiments On Rrp3htsupporting

confidence: 87%

“…[27][28][29]. Zinc oxide films were prepared by spraying 3 'puffs' of 100 mM ZnCl 2 solution in DI water onto similar TFT substrates heated to 400 °C o on a hotplate, which leads to the formation of semiconducting ZnO films('spray pyrolysis', more processing details in [30]). Film thickness was determined with a Veeco Dektak XT surface contact profilometer as 15 nm for rrP3HT and 80 nm for ZnO; ZnO films also are significantly rougher.…”

Section: Methodsmentioning

confidence: 99%

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Comparing electron- and hole transporting semiconductors in ion sensitive water- gated transistors

Baroot

Grell

2019

Materials Science in Semiconductor Processing

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We present a systematic study comparing different solution-processed semiconductors in cation-sensitive water-gated thin film transistors (WGTFTs): A hole transporting semiconducting polymer (rrP3HT), and an electron-transporting precursor-route metal oxide (ZnO). To allow comparison, we used the same ionophore to sensitise the gate contact for both semiconductors. We find both organic hole transporter and inorganic electron transporter have their relative merits, and drawbacks, in ion-sensitive WGTFTs. Hole transporting rrP3HT WGTFTs show low hysteresis under water-gating and give super-Nernstian sensitivity. However, rrP3HT responds to ionic strength in water even when WGTFTs are not sensitised, compromising selectivity. Electron transporting ZnO WGTFTs show higher mobility, but also stronger hysteresis, and sub-Nernstian response. However, ZnO WGTFTs show little response to ionic strength when not sensitised. We rationalise the super-versus-sub-Nernstian sensitivities via a capacitive amplification/attenuation effect. Our study suggests that the optimum semiconductor material for ion-selective WGTFTs would be a precursor-route inorganic hole transporting semiconductor.

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Section: Figs 3-5 Show Three Control Experiments On Rrp3htsupporting

confidence: 87%

Section: Methodsmentioning

confidence: 99%

Comparing electron- and hole transporting semiconductors in ion sensitive water- gated transistors

Baroot

Grell

2019

Materials Science in Semiconductor Processing

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“…The Zn 2p doublet with Zn 2p 3/2 at 1022.0 eV and Zn 2p 1/2 at 1045.1 eV cannot alone provide information about the oxidation state of Zn. For a clear identification it is necessary to consider the maximum of the Zn LMM Auger line appearing here at ~988 eV which ensures a presence of ZnO (see Reference [65]). The corresponding O 1s peak is observed at 530.5 eV (Figure 4b).…”

Section: Resultsmentioning

confidence: 99%

The Multisensor Array Based on Grown-On-Chip Zinc Oxide Nanorod Network for Selective Discrimination of Alcohol Vapors at Sub-ppm Range

Bobkov

Varezhnikov

Plugin

et al. 2019

Sensors

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We discuss the fabrication of gas-analytical multisensor arrays based on ZnO nanorods grown via a hydrothermal route directly on a multielectrode chip. The protocol to deposit the nanorods over the chip includes the primary formation of ZnO nano-clusters over the surface and secondly the oxide hydrothermal growth in a solution that facilitates the appearance of ZnO nanorods in the high aspect ratio which comprise a network. We have tested the proof-of-concept prototype of the ZnO nanorod network-based chip heated up to 400 °C versus three alcohol vapors, ethanol, isopropanol and butanol, at approx. 0.2–5 ppm concentrations when mixed with dry air. The results indicate that the developed chip is highly sensitive to these analytes with a detection limit down to the sub-ppm range. Due to the pristine differences in ZnO nanorod network density the chip yields a vector signal which enables the discrimination of various alcohols at a reasonable degree via processing by linear discriminant analysis even at a sub-ppm concentration range suitable for practical applications.

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“…Synthesis of metal oxide nanoparticles and nanocomposites holds great importance due to numerous applications of nanomaterials in various fields [17][18][19][20][21][22]. Nanomaterials have outstanding properties which qualify them to be used in diverse applications such as photovoltaics [23], ion sensors [24], optics [25], electronic devices [26], photocatalysts [20,27], reduction catalysts [8,28] etc.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of catalytic reduction of 4-nitrophenol using MoO₃ nanobelts incorporated SiO₂ nanocomposite fabricated by nanosecond pulsed laser ablation technique

et al. 2023

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Nanocomposites of SiO2/MoO3 having respective weight ratios of 3:1, 2:2, and 1:3 were synthesized using a nanosecond pulsed laser ablation method. The prepared samples were analyzed with UV-Vis and Raman spectroscopy, XRD, SEM, EDX, and TEM. Based on the TEM analysis, the morphology and the structure of the nanocomposites varied with the change in the ratio of MoO3, and the sample containing the highest amount of MoO3 shows a compact morphology and a higher number of nanoparticles. The band gap energy of the nanocomposites increases with an increase in MoO3 load. The nanocomposites were used in the catalytic reduction of 4-nitrophenol (4-NP) in the presence of NaBH4. The reduction time of 4-NP decreases as the amount of MoO3 increases in the nanocomposite. The rate constants were estimated at 0.0878, 0.2319, and 0.1726 min-1 for SiO2/MoO3 (3:1, 2:2, and 1:3) catalysts respectively. The results demonstrate the good catalytic performance of the prepared materials by enabling fast reduction of 4-NP.

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A New Precursor Route to Semiconducting Zinc Oxide

Cited by 9 publications

References 15 publications

Comparing electron- and hole transporting semiconductors in ion sensitive water- gated transistors

Comparing electron- and hole transporting semiconductors in ion sensitive water- gated transistors

The Multisensor Array Based on Grown-On-Chip Zinc Oxide Nanorod Network for Selective Discrimination of Alcohol Vapors at Sub-ppm Range

Enhancement of catalytic reduction of 4-nitrophenol using MoO₃ nanobelts incorporated SiO₂ nanocomposite fabricated by nanosecond pulsed laser ablation technique

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A New Precursor Route to Semiconducting Zinc Oxide

Cited by 9 publications

References 15 publications

Comparing electron- and hole transporting semiconductors in ion sensitive water- gated transistors

Comparing electron- and hole transporting semiconductors in ion sensitive water- gated transistors

The Multisensor Array Based on Grown-On-Chip Zinc Oxide Nanorod Network for Selective Discrimination of Alcohol Vapors at Sub-ppm Range

Enhancement of catalytic reduction of 4-nitrophenol using MoO3 nanobelts incorporated SiO2 nanocomposite fabricated by nanosecond pulsed laser ablation technique

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Enhancement of catalytic reduction of 4-nitrophenol using MoO₃ nanobelts incorporated SiO₂ nanocomposite fabricated by nanosecond pulsed laser ablation technique