A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies)

Djezzar, Boualem; Smatti, A.; Oussalah, Slimane

doi:10.1109/tns.2004.832547

Cited by 24 publications

(2 citation statements)

References 27 publications

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“…For instance, Sun et al [9] investigated that GaN HEMTs which are with Schottky metallic gate structures typically exhibit a small shift after TID irradiation, while GaN HEMTs with MOS gates exhibit additional threshold voltage shift compared to similar devices with Schottky gates because of hole trapped in the gate oxide. Lidow et al [10] have studied the E-mode Schottky gate devices and concluded that the devices exhibited drifts of ∼0.2 V. Ives et al [11] have investigated the commercial radio frequency (RF) D-mode Schottky gate power HEMTs and indicated that the devices exhibited shifts of about 0.15 V. On the other hand, although significant progress has been made in understanding the underlying physics of TID irradiation in the Si MOSFETs [12][13][14][15][16][17][18][19], there is not much work undertaken on the TID effects in the Cascode GaN HEMTs. Chen et al [20] have investigated the high and low dose-rate radiation damage effects of the Cascode structure GaN power devices and found that the threshold voltage of the Cascode device was negatively drifted, having no enhanced low dose rate sensitivity effect.…”

Section: Introductionmentioning

confidence: 99%

Total-ionizing dose irradiation induced degradation behavior and mechanism of the Cascode GaN HEMTs

Cai

Chen

Zhou

2023

Semicond. Sci. Technol.

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In this article, the effects of total ionizing dose (TID) irradiation and the annealing treatment on the degradation of the commercial Cascode GaN high-electron-mobility transistors (HEMTs) were investigated, and low frequency noise method (LFN) was carried out to analyze the defects. The DC characteristics show that the device after TID irradiation with different doses exhibits a negative drift of threshold voltage (Vth) and a remarkable increase of drain-source current (Ids) with respect to the fresh one. Meanwhile, with increasing doses of the TID irradiation, the off-state drain leakage current increases, while the drain-source resistance decreases. The gate-lag characteristic gets better for the Cascode GaN HEMTs after TID irradiation. The transfer characteristics, output characteristics, blocking characteristics and capacitance characteristics of the devices can partly be restored by annealing treatment, but there is no pronounced influence on the gate-lag characteristics and drain-source resistance. The trap density extracted by the LFN method decreases in the Cascode GaN HEMTs after TID irradiation. The degradation behavior and mechanism of the Cascode GaN HEMTs under TID irradiation are analyzed. The experimental results may provide a useful reference for the design and space application of the Cascode GaN HEMTs.

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Section: Introductionmentioning

confidence: 99%

Total-ionizing dose irradiation induced degradation behavior and mechanism of the Cascode GaN HEMTs

Cai

Chen

Zhou

2023

Semicond. Sci. Technol.

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“…This method is derived from oxide-trap charge-pumping (OTCP) method, developed for radiation effect. 11,12) It can give further information on the behavior of NBTI-induced interface and oxide traps.…”

Section: Introductionmentioning

confidence: 99%

A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

Djezzar¹,

Tahi²,

Benabdelmoumene³

et al. 2012

Jpn. J. Appl. Phys.

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Bi-lateral force measurements on the supporting limbs in postural sway while standing still were carried out to evaluate postural stability of craniocerebral injured (CCI) patients. Brain pathology of these patients was characterised by CT scans and MRI, as well as by their cognitive and behavioural disturbances. Normal subjects of the same age group were tested as controls. From the force tracings obtained, three oscillation frequencies were identified, with orders of magnitudes of 6, 1.5 and 0.1 Hz, respectively, of which the middle frequency, i.e. that corresponding to 1.5 Hz, was selected for subsequent processing and analysis, which included the determination of relative sequence of the force vectors on both feet and evaluation of timings and amplitudes of the waveforms. Weight-bearing imbalance was defined in the vertical direction to express the difference between the average forces supported by each of the legs. In the horizontal plane, two parameters were defined: Sway Total Activity (sii), to represent the vector summation of the absolute values of the horizontal force components acting on both legs; and Asymmetry (ASYM), to express the difference in activities between the two legs. The results presented disclose the reactive force patterns acting on each of the legs of CCI individuals, in comparison with normal individuals. Although the'forces were shown to act synchronously on both legs, in most of the patients, they appeared to be asymmetrical in nature, with a typical vectorial pattern for every individual, which generally differed from that of normal subjects. Sway activity was found to be significantly higher in the CCI group as compared with that of the normal controls. These results justify the necessity to study the activity of each of the legs, rather than that corresponding to the resultant forces acting on the whole body, when treating the external forces involved in the stabilisation and regulation of the standing posture of these patients. An attempt to grade the patients according to ascending order of neurological deficits disclosed that their sway disturbances, as revealed by the magnirude of sway total activity and asymmetry, had a tendency to be related to the severity of neurobehavioural disturbances.

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Investigation of voltage-swing effect and trap generation in high-k gate dielectric of MOS devices by charge-pumping measurement

Chang‐Liao

et al. 2008

Microelectronic Engineering

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A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies)

Cited by 24 publications

References 27 publications

Total-ionizing dose irradiation induced degradation behavior and mechanism of the Cascode GaN HEMTs

Total-ionizing dose irradiation induced degradation behavior and mechanism of the Cascode GaN HEMTs

A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

Investigation of voltage-swing effect and trap generation in high-k gate dielectric of MOS devices by charge-pumping measurement

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