A new opportunity for the emerging tellurium semiconductor: making resistive switching devices

Abstract

The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operating current requirements. The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. Preliminary device optimization efforts also indicate large and unique design space for Te-based resistive switching devices.

One-Dimensional Atomic Chains for Ultimate-Scaled Electronics

“…For instance, we may build the smallest memory device based on 1D ACs and, more importantly, identify the corresponding filamentary conductance quanta. Recently, the elemental Te-based resistive switching devices have attracted wide attention, while the operating mechanisms are generally explained from a macro perspective, e.g., Joule heat-induced phase transition. , If one can design 1D ACs as an individual filamentary resistive switch, the physical nature of filamentary conductance quanta may be uncovered to show more insights. The ACs filamentary switches would shrink the memory devices downscaling to the atomic scale, by which the data processing and memorizing will be more precise and fault-tolerant.…”

Dual sensing signal decoupling based on tellurium anisotropy for VR interaction and neuro-reflex system application

“…Tellurium (Te) is an emerging semiconductor material for next-generation devices with low thermal conductivity (1.6 W m −1 K −1 ) 1 , 2 , excellent transport properties 3 , 4 , high carrier mobility of ~1000 cm 2 V −1 s −1 5 , 6 , and anisotropic atomic structure 7 , 8 . These properties make Te a promising candidate as the material of choice for next generation electronic and photonic devices 9 – 11 . Currently, the trend of modernizing flexible electronics increasingly requires convenience and multifunctionality for future devices 12 – 15 .…”

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array

“…Resistive random-access memory (RRAM) has been intensely investigated over the past 20 years due to its excellent application potential as a next-generation memory technology and neuromorphic computing. − However, the significant hurdle for industrial application is the spatial and temporal fluctuation of the switching voltage and resistance states due to the stochastic nature of ion migration and overinjection of ion species during the resistive switching process. − To solve this crucial issue, numerous attempts have been made to control the ion migration process. These strategies fall into three categories: (1) concentration of the electric field, ,,− (2) physical confinement of the ion migration path, ,− and (3) a chemical interaction between the inserted particle and switching medium to localize the ion migration process. ,, The corresponding references on the strategy categories, methods, compatibilities, performances, and characteristics are comprehensively summarized in Table .…”