A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

Raffo, Antonio; Vadalà, Valeria; Yamamoto, Hiroshi; Kikuchi, Ken; Bosi, Gianni; Ui, Norihiko; Inoue, Katsuro; Vannini, G.

doi:10.1109/tmtt.2019.2961078

Cited by 28 publications

(14 citation statements)

References 18 publications

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“…Although the GaN-HEMT devices are primarily intended for high power and high temperature operation for highfrequency applications, [26][27][28][29] a growing attention is being given also for high-frequency low-noise applications. [30][31][32] However, in order to build large-signal and noise models for high-power and low-noise amplifiers, the extraction of the small-signal equivalent circuit plays a crucial role.…”

Section: Small-signal Modelingmentioning

confidence: 99%

2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

Jarndal

Alim

Raffo

et al. 2021

Int J RF Microw Comput Aided Eng

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In this paper, a comparative analysis has been conducted on GaN high electron mobility transistor (HEMT) technology on Si and SiC substrates. Smallsignal characteristics of 2-mm GaN-on-Si and GaN-on-SiC devices have been investigated. Both devices have the same gate length of 0.5 μm. Special emphasis has been put on the temperature dependence of the buffer/substrate loading effects arising from the Si substrate. As a matter of fact, the "cold" pinch-off admittance (Y-) parameter measurement showed significant loading effect for the Si-based device with respect to the SiC-based one. This has been clearly supported by the analysis of the extracted parameters of the smallsignal equivalent-circuit model. The model was also validated by simulating active scattering (S-) parameters, which showed a very good agreement with the corresponding measurements. The results of this paper highlight the impact of buffer/substrate leakage currents on small-signal characteristics and the importance of taking this into account during the modeling phase of the GaN-on-Si HEMT technology. The lower thermal conductivity of this substrate increases the internal temperature, thus stimulating more leakage and reduction of the device power efficiency.

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Section: Small-signal Modelingmentioning

confidence: 99%

2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

Jarndal

Alim

Raffo

et al. 2021

Int J RF Microw Comput Aided Eng

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View full text Add to dashboard Cite

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“…4,5 It plays a relatively important role in the auxiliary design of amplifiers, oscillators, mixers and so forth. [6][7][8][9] Therefore, to take full advantage of InP HEMTs' properties and to integrate them into viable microwave and RF circuit applications, a fully robust and accurate RF InP HEMT model is of prime importance. In general, the large-signal models for III-V based HEMTs are usually developed from the classic models for metal-semiconductor field effect transistors (MESFETs) considering the physical similarities.…”

Section: Introductionmentioning

confidence: 99%

Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

Zhang

Gao

2023

Int J Numerical Modelling

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A direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter () as a function of gate‐to‐source voltage. Model verification is carried out by comparison of measured and simulated current–voltage characteristics and S‐parameters. Good agreement is obtained between the measured and modeled results for 2 × 15 μm gatewidth (number of gate fingers × gatewidth) 70‐nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I–V and RF characteristics is also obtained in the proposed model, compared with the conventional one.

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“…Currently existing transistor models for GaN include the physics-based model, the equivalent circuit model and the behavioral model. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] Both of the first two models provide better results than the behavioral model when the devices are pushed to operating extremes, and are therefore widely used as the best models for existing devices in PA design. However, both the physics-based model and the equivalent circuit model are often difficult to adapt to current rapidly evolving semiconductor technologies, such as GaN, 28 due to the difficulty of their development.…”

Section: Introductionmentioning

confidence: 99%

“…Currently existing transistor models for GaN include the physics‐based model, the equivalent circuit model and the behavioral model 12–27 . Both of the first two models provide better results than the behavioral model when the devices are pushed to operating extremes, and are therefore widely used as the best models for existing devices in PA design.…”

Section: Introductionmentioning

confidence: 99%

Application of harmonic included CPL‐QPHD model of GaN device for broadband PA design

Tang

Cai

2022

Int J RF Mic Comp-Aid Eng

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In this work, a harmonic included canonical piecewise linear (CPL) function based quadratic poly-harmonic distortion (QPHD) model is presented. The proposed model employs the framework of the standard QPHD model, making use of the CPL functions for interpolation of the amplitude of the dominant input signal. Compared with the standard QPHD model, the model described in this work is able to predict transistor behavior at different levels of input powers with one single set of model coefficients. The harmonic information has also been added in this model to make it more complete. The model is validated in terms of both DC and RF behavior through simulated data of a 10 W gallium nitride (GaN) high-electron-mobility transistor (HEMT) over a wide range of load conditions and power levels. In addition, the model is implemented in advanced design system (ADS) with frequency-defined device (FDD), and applied for a broadband power amplifier (PA) design. Chebyshev low-pass topology is used for both input and output matching network design. Finally, a broadband PA is implemented with an average power added efficiency of 66.23%, an average power of 41.09 dBm, and an average gain of 13.09 dB across the operating frequency range from 0.6 to 1.7 GHz. The simulation results of the harmonic included CPL-QPHD model are highly matched with the measurement results of the designed PA, demonstrating the feasibility of applying the proposed model for broadband PA design.

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A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

Cited by 28 publications

References 18 publications

2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

Application of harmonic included CPL‐QPHD model of GaN device for broadband PA design

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