A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy

Ferro, Gabriel; Chaussende, Didier

doi:10.1038/srep43069

Cited by 23 publications

(17 citation statements)

References 46 publications

(70 reference statements)

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“…According to Refs. [24,25], <111>-oriented 3C-SiC shows a polar crystal structure containing Si {111} and C {-1-1-1} planes. The substituted N atoms mostly occupy the C sites in the SiC lattice.…”

Section: Resultsmentioning

confidence: 99%

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Lai

Xia

et al. 2020

Materials

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Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.

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Section: Resultsmentioning

confidence: 99%

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Lai

Xia

et al. 2020

Materials

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“…These centres are related to carbon vacancies (VC), and demonstrate an acceptor-like behaviour [63], [64]. Their concentration depends on the growth rate and the C/Si ratio in the gas phase during SiC epitaxy [65]. The Z1/Z2 and EH6/7 deep-lying electron traps have proven to be very stable against annealing temperatures that reach 1300°C [62].…”

Section: H-sic Epimentioning

confidence: 99%

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

Arvanitopoulos

Antoniou

Perkins

et al. 2019

IEEE Trans. on Ind. Applicat.

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Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality. Inevitably, a comparison to the most well developed polytype of SiC, the 4H-SiC, should exist. It is therefore important to develop Finite Element Method (FEM) techniques and models for accurate device design, analysis and comparison. It is also needed to perform an exhaustive investigation with scope to identify which family of devices, which voltage class and for which applications this polytype is best suited. In this work, we validate the recently developed Technology Computer Aided Design (TCAD) material models for 3C-SiC and those of 4H-SiC with measurements on power diodes. An excellent agreement between measurements and TCAD simulations was obtained. Thereafter, based on this validation, 3C-and 4H-SiC vertical power diodes are assessed, to create trade-off maps. Depending on the operation requirements imposed by the application, the developed trade-off maps set the boundary of the realm for those two polytypes and allows to predict which applications would benefit once electrically graded 3C-SiC becomes available.

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“…The first attempts of epitaxial growth of SiC layers were carried out by Campbel [175] using thermal reduction technique (TRT), whereas the first epitaxial growth of SiC layer from the gas phase was described Minagawa [176]. The CVD method consolidated its position as a high-tech technology method for the production of SiC epitaxial layers, allowing the doping the semiconductor in a controlled manner [177][178][179]. Similarly to the implantation method the CVD epitaxial layers allowed to determine the electrical properties of nitrogen dopant [180,181], donor energy level in the band gap [182,183] or the Hall scattering factor [184].…”

Section: Nitrogen Properties In Sicmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy

Cited by 23 publications

References 46 publications

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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