A New Method for the Precise Measurement of Wafer Roll off of Silicon Polished Wafer

Kimura, Masahiro; Saito, Yasuo; Daio, Hiroshi; Yakushiji, Kenji

doi:10.1143/jjap.38.38

Cited by 28 publications

(6 citation statements)

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“…Before the experiments, the surface of the polishing pad was conditioned with a #170 diamond disc. The obtained edge roll-off was quantitatively evaluated by the roll-off amount (ROA), which is defined as the vertical displacement from the level line to the measured wafer profile at a position 1 mm from the wafer edge [10]. The level line was at 3-6 mm from the edge.…”

Section: Polishing Pad Properties Determining Edge Roll-offmentioning

confidence: 99%

New Evaluation Method of Polishing Pad Property for Estimating Edge Roll-Off of Silicon Wafer

Obayashi

Satake

Enomoto

2016

MSF

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With the ever-growing demand for further increase in the integration density of semiconductor devices, silicon wafers as the substrates for most devices are required to be extremely flat. In particular, it is strongly required to suppress edge roll-off, which seriously deteriorates the surface flatness near the wafer edge during polishing process in the final stage of the wafer manufacturing. In this study, we investigate the properties of polishing pads required for decreasing edge roll-off and propose the evaluation method of the properties. Polishing experiments with silicon wafers and evaluation tests for polishing pads reveal that the proposed method can estimate the obtained edge surface flatness.

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Section: Polishing Pad Properties Determining Edge Roll-offmentioning

confidence: 99%

New Evaluation Method of Polishing Pad Property for Estimating Edge Roll-Off of Silicon Wafer

Obayashi

Satake

Enomoto

2016

MSF

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“…2. 9) The measurement point is generally located 1 mm from the outermost periphery of the wafer. The reference line is generally a straight line fitting the surface profile at 3 to 6 mm from the outermost periphery of the wafer.…”

Section: Wafer Edge Roll-offmentioning

confidence: 99%

Influence of Wafer Edge Geometry on Removal Rate Profile in Chemical Mechanical Polishing: Wafer Edge Roll-Off and Notch

Fukuda¹,

Fukuda

Fukunaga³

et al. 2012

Jpn. J. Appl. Phys.

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In the chemical mechanical polishing (CMP) process, uniform polishing up to near the wafer edge is essential to reduce edge exclusion and improve yield. In this study, we examine the influences of inherent wafer edge geometries, i.e., wafer edge roll-off and notch, on the CMP removal rate profile. We clarify the areas in which the removal rate profile is affected by the wafer edge roll-off and the notch, as well as the intensity of their effects on the removal rate profile. In addition, we propose the use of a small notch to reduce the influence of the wafer notch and present the results of an examination by finite element method (FEM) analysis. #

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“…ROA is defined as the vertical height distance from the leveled surface to the profile in the roll off region at the position 1 mm distant from the physical edge. The leveled surface is set to be the approximate line on 3 mm -6 mm from the physical edge [6]. As for the edge shape, ROA in Pad A was smaller than that in Pad B (Fig.…”

Section: Investigation Of the Influence Of Polishing Pressure On Edge...mentioning

confidence: 99%

Achieving High Flatness of Workpiece Edge Shape by Considering Polishing Pressure

Miyake

Enomoto

2010

KEM

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In recent years, the achievement of further high flatness of workpiece edge shape is strongly required in mirror finishing. Especially, the edge roll off of silicon wafers as the substrates of semiconductor devices is demanded to decrease in the polishing process for raising the yield of IC chips. Many theoretical and experimental analyses for the edge roll off generation have been already done to meet the demand. The analyses, however, cannot fully account for the obtained edge shape in actual polishing. Concretely, the influence of the polishing pressure as one of the key polishing conditions on the edge roll off has not been clarified. In this study, the influence of the polishing pressure on the edge shape was investigated by the polishing experiments and the edge roll off generation analyses using the model based on the viscoelasticity of the polishing pad, which was proposed in the previous study. And it was revealed that an appropriate polishing pressure is needed to be set for achieving high flatness of workpiece edge shape with the consideration of the properties of applied polishing pads.

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A New Method for the Precise Measurement of Wafer Roll off of Silicon Polished Wafer

Cited by 28 publications

References 0 publications

New Evaluation Method of Polishing Pad Property for Estimating Edge Roll-Off of Silicon Wafer

New Evaluation Method of Polishing Pad Property for Estimating Edge Roll-Off of Silicon Wafer

Influence of Wafer Edge Geometry on Removal Rate Profile in Chemical Mechanical Polishing: Wafer Edge Roll-Off and Notch

Achieving High Flatness of Workpiece Edge Shape by Considering Polishing Pressure

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