A new lifetime characterization technique using drain current transients in SOI material

Ionescu, A. M.; Cristoloveanu, S.; Munteanu, Daniéla; Elewa, T.; Gri, Martine

doi:10.1016/s0038-1101(96)00113-x

Cited by 17 publications

(6 citation statements)

References 3 publications

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“…Hall‐effect measurements on thin (<200 nm) boron‐doped nominally p‐type SIMOX samples indicated n‐type conduction in the top silicon layer, even though the substrate (below the BOX) remained p‐type. This a well established effect for SIMOX samples and has been attributed to the introduction of unintentional donors (leading to dopant overcompensation) during the implantation and annealing steps 23–28. The change in carrier type renders the influence of physisorbed water on the conductivity of either n‐type or overcompensated p‐type H‐SIMOX the same, causing electrons to accumulate on both surfaces.…”

Section: Resultsmentioning

confidence: 96%

Molecular Modulation of Conductivity on H‐Terminated Silicon‐On‐Insulator Substrates

Dubey

Rosei

Lopinski

2010

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The adsorption of a range of molecular species (water, pyridine, and ammonia) is found to reversibly modulate the conductivity of hydrogen‐terminated silicon‐on‐insulator (H‐SOI) substrates. Simultaneous sheet‐resistance and Hall‐effect measurements on moderately doped (1015 cm−3) n‐ and p‐type H‐SOI samples mounted in a vacuum system are used to monitor the effect of gas exposure in the Torr range on the electrical‐transport properties of these substrates. Reversible physisorption of “hole‐trapping” species, such as pyridine (C5H5N) and ammonia (NH3) produces highly conductive minority‐carrier channels (inversion) on p‐type substrates, mimicking the action of a metallic gate in a field‐effect transistor. The adsorption of these same molecules on n‐type SOI induces strong electron‐accumulation layers. Minority/majority channels are also formed upon controlled exposure to water vapor. These observations can be explained by a classical band‐bending model, which considers the adsorbates as the source of a uniform surface charge ranging from +1011 to +1012q cm−2. These results demonstrate the utility of DC transport measurements of SOI platforms for studies of molecular adsorption and charge‐transfer effects at semiconductor surfaces.

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Section: Resultsmentioning

confidence: 96%

Molecular Modulation of Conductivity on H‐Terminated Silicon‐On‐Insulator Substrates

Dubey

Rosei

Lopinski

2010

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“…The floating body is at the origin of several parasitic phenomena specific to SOI devices such as drain current overshoots and undershoots 17,18,20) or bipolar amplification. This last phenomenon is essential for the sensitivity of devices and circuits to single-event transient (SET).…”

Section: Three-dimensional Numerical Simulationmentioning

confidence: 99%

Graded-channel junctionless dual-gate MOSFETs for radiation tolerance

Wang¹,

Shan²,

Liu³

et al. 2017

Jpn. J. Appl. Phys.

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In this work, we investigate the bipolar gain and collected charge under heavy ion irradiation in graded-channel junctionless dual-gate MOSFETs. The transient response of the graded-channel device is compared with that of the conventional uniform-channel device. We present the different doping levels on the channel around the source and show that the bipolar gain and collected charge of the graded-channel device are lower than those of the uniform-channel device, owing to the lower doping level around the source in the channel, which induces lower floating body effects. We consider the effect of changing the doping level in a graded-channel device.

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“…48,49 In the case of SOI wafers made by Smart Cut ™ , the interface quality is not degraded by hydrogen implantation or thermal annealing: the density of traps at the Si layer-BOX interface is less than 3 × 10 11 eV − 1 cm − 2 . 49 Moreover, Ionescu et al ., measuring carrier lifetimes by photoconductivity decay in the Si substrate and the transient ψ -MOSFET technique, 50 reported that carrier lifetimes in the top Si layer may be higher than 100 μ s in SOI made by Smart Cut ™ , which outperforms the value measured in SIMOX SOI.…”

Section: Soi Wafer Structures and Characterizationmentioning

confidence: 99%

Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology

Moriceau

Fournel

Rieutord³

2014

Silicon-on-Insulator (SOI) Technology

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A new lifetime characterization technique using drain current transients in SOI material

Cited by 17 publications

References 3 publications

Molecular Modulation of Conductivity on H‐Terminated Silicon‐On‐Insulator Substrates

Molecular Modulation of Conductivity on H‐Terminated Silicon‐On‐Insulator Substrates

Graded-channel junctionless dual-gate MOSFETs for radiation tolerance

Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology

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