Graded-channel junctionless dual-gate MOSFETs for radiation tolerance

Wang, Ying; Shan, Chan; Liu, Chaoming; Li, Xingji; Yang, Jianqun; Yan, Tie; Bao, Meng-Tian; Cao, Fei

doi:10.7567/jjap.56.124201

Cited by 6 publications

(2 citation statements)

References 23 publications

(26 reference statements)

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“…14 . It can be seen that when LET increases, β reduces because of the higher injection regime of the bipolar transistor 23 . It can be found from Fig.…”

Section: Resultsmentioning

confidence: 99%

“…A study on Ge-Junctionless CMOSFET under X-ray radiation attack shows a larger shift in threshold voltage 22 . The heavy ion radiation study on Graded Channel Junctionless Double Gate FET (GC-JLDGFET) shows reduced collected charge after an ion strike with reduced I peak 23 . The heavy ion radiation effect on silicon based Junctionless Accumulation Mode Double Gate Transistor (JAM MOSFET) demonstrates better radiation hardness at lower dose of LET values 24 .…”

Section: Introductionmentioning

confidence: 99%

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TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Aishwarya,

Lakshmi

2024

Sci Rep

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Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects and fabrication difficulties. In this work, 20 nm JLTFET is proposed with Silicon in the drain/channel region whereas source uses different materials, Silicon Germanium (SiGe), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Indium Arsenide (InAs). The device performance is examined by subjecting it to heavy ion radiation at a lower and higher dose of linear energy transfer (LET) values. It can be seen that the most sensitive location is the source/channel (S/C) interface for SiGe, GaN and GaAs whereas the drain/channel (D/C) interface for InAs. Further analysis is carried out at these vulnerable regions by matching ION of all materials. The parameters, transient peak current (Ipeak), collected charge (QC), threshold voltage shift (ΔVth) and bipolar gain (β) are extracted using transient simulations. It is observed that for a lower dose of LET, Ipeak of SiGe is 27% lesser than InAs and for higher dose of LET, SiGe shows 56% lesser Ipeak than InAs. SiGe is less sensitive at lower and higher dose of LET due to reduced ΔVth, tunneling and electron density.

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“…14 . It can be seen that when LET increases, β reduces because of the higher injection regime of the bipolar transistor 23 . It can be found from Fig.…”

Section: Resultsmentioning

confidence: 99%