A new lateral MOS-controlled thyristor

Darwish, M.

doi:10.1109/55.55272

Cited by 16 publications

(4 citation statements)

References 5 publications

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“…As a key device for power conversion and control, the LTT is required to withstand a high critical rate of rise of off-state voltage (dv/dt capability) to cope with emergencies such as surge voltage in the circuit [1,2]. The conventional solution is to employ a cathode short structure in the N + cathode so that part of the P base region is directly connected to the cathode metal, thereby the surge current can be quickly released to prevent the device from false triggering of inappropriate dv/dt behavior [3][4][5][6][7]. This solution can be used * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors

Yin

Bai

Liu

et al. 2023

Semicond. Sci. Technol.

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Cathode shorts are an essential part in light-triggered thyristors (LTTs) that are utilized to achieve adequate dv/dt capability and switching characteristics. In this paper, we designed cathode shorts structures specifically for small-size LTTs; the patterns and structural parameters were shown. Devices were fabricated and measured, and the influences of the cathode shorts on device performance were examined. The results showed that, based on the optimized design, the cathode shorts allowed excellent dv/dt capability and switching performance while achieving good optoelectronic properties.

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Section: Introductionmentioning

confidence: 99%

Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors

Yin

Bai

Liu

et al. 2023

Semicond. Sci. Technol.

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“…1) Lateral MOSgated thyristors have also attracted considerable attention for integration with complementary MOS (CMOS) in power ICs. 2,3) Among these devices, the lateral EST (LEST), a cross-sectional view of which is shown in Fig. 1, may be promising due to its unique gate-control current saturation characteristics, which ensure a wide safe operating area (SOA).…”

Section: Introductionmentioning

confidence: 99%

A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor

Choi¹,

Ji²,

Jeon³

et al. 2006

jjap

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A new circuit to protect lateral emitter switched thyristors (LESTs) for high voltage current saturation is proposed. We fabricated this circuit by employing a widely used process compatible with insulated gate bipolar transistors (IGBTs). When the floating n+ voltage is larger than the threshold voltage of protecting metal oxide semiconductor field effect transistor (MOSFET), the protective circuit alters the operation of the LEST from regenerative mode to non-regenerative mode. Experimental results showed that a high voltage current saturation exceeding 200 V was measured in the LEST with the proposed protective circuit, while the current saturation of the conventional LEST was limited to 17 V. This allowed the LEST to withstand the hard switching fault (HSF) condition over 10 µs during the hard switching fault (HSF) condition.

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“…Lateral MOS-controllable thyristors offer a very low on-state resistance when compared to LDMOSFETs [l] or LIGBTs [2], however, the turn-off mechanism by short circuiting the cathode junction through a MOSFET channel [3] has been found difficult to control. In addition, in MOS controllable thyristors, due to the absence of the MOS-gate control during the on-state operation, the Safe Operating Area (SOA) is reduced when compared to LIGBTs or LDMOSFETs.…”

Section: Introductionmentioning

confidence: 99%

The double gate lateral inversion layer emitter transistor-a novel power device concept with a dynamic emitter

Udrea

Amaratunga²

Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting

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A novel device concept termed the Double Gate Lateral Inversion Layer Emitter Transistor (DG LILET) is proposed and demonstrated experimentally. The device is based on a new physical injection mechanism. This is the use of a MOS inversion layer as a minority carrier injector. The DG ILET can operate in three distinctive modes, MOSFET, transistor and thyristor as function of the potentials applied to the cathode and anode gates. The device offers a high switching frequency, a large safe operating area and a flexible on-state operation and therefore is a promising candidate for high voltage, fast speed devices for integrated circuits.

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A new lateral MOS-controlled thyristor

Cited by 16 publications

References 5 publications

Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors

Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors

A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor

The double gate lateral inversion layer emitter transistor-a novel power device concept with a dynamic emitter

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