A new investigation of oxygen flow influence on ITO thin films by magnetron sputtering

Chen, Aqing; Zhu, Kaigui; Zhong, Huicai; Shao, Qinghui; Ge, Guanglu

doi:10.1016/j.solmat.2013.08.036

Cited by 101 publications

(43 citation statements)

References 37 publications

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“…The lowest binding energy of O 1s (O I ) that appeared at 529.5 ± 0.1 eV is associated with metal-oxide binding (i.e., the Fe-O bond) [36]. The second O 1s binding energy (O II ), which is located at 530.2 ± 0.1 eV, corresponds to the oxygen vacancy [37]. The highest binding energy of O 1s (O III ), which is situated at 531.5 ± 0.1 eV, represents the surface oxygen resulted from the hydrocarbons, surface contamination, and so on [38].…”

Section: Resultsmentioning

confidence: 99%

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

Xiao

Zhou

et al. 2020

Nanoscale Res Lett

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Hematite (α-Fe 2 O 3 ) material is regarded as a promising candidate for solar-driven water splitting because of the low cost, chemical stability, and appropriate bandgap; however, the corresponding system performances are limited by the poor electrical conductivity, short diffusion length of minority carrier, and sluggish oxygen evolution reaction. Here, we introduce the in situ Sn doping into the nanoworm-like α-Fe 2 O 3 film with ultrasonic spray pyrolysis method. We show that the current density at 1.23 V vs. RHE (J ph@1.23V ) under one-sun illumination can be improved from 10 to 130 μA/cm 2 after optimizing the Sn dopant density. Moreover, J ph@1.23V can be further enhanced 25folds compared to the untreated counterpart via the post-rapid thermal process (RTP), which is used to introduce the defect doping of oxygen vacancy. Photoelectrochemical impedance spectrum and Mott-Schottky analysis indicate that the performance improvement can be ascribed to the increased carrier density and the decreased resistances for the charge trapping on the surface states and the surface charge transferring into the electrolyte. Xray photoelectron spectrum and X-ray diffraction confirm the existence of Sn and oxygen vacancy, and the potential influences of varying levels of Sn doping and oxygen vacancy are discussed. Our work points out one universal approach to efficiently improve the photoelectrochemical performances of the metal oxide semiconductors.

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Section: Resultsmentioning

confidence: 99%

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

Xiao

Zhou

et al. 2020

Nanoscale Res Lett

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“…However, there are few studies to report the effect of oxygen flow rate on the residual stress and surface roughness of sputtering ITO thin films [12][13][14]. This study investigated the effect of oxygen flow rate on optical, mechanical, and electrical properties and the surface roughness of ITO thin films prepared by DC magnetron sputtering technique.…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

Tien

Lin

Chang

et al. 2018

Advances in Condensed Matter Physics

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This study presents the effect of oxygen flow rate on the optical, electrical, and mechanical properties of indium tin oxide (ITO) thin films prepared by the DC magnetron sputtering technique. The oxygen flow rate was varied from 10 to 50 sccm. The ITO thin films deposition under different oxygen flow rates exhibits different properties. We used an optical spectrometer to measure the optical transmittance and a four-point probe instrument to determine the resistivity. A home-made Twyman-Green interferometer was used to evaluate residual stress and a microscopic interferometer was used to measure the surface roughness of ITO thin films. The experimental results show that the average optical transmittance is larger than 85% in visible range; the electrical resistivity has a minimum 6.85 × 10 −4 ohm-cm for the oxygen flow of 10 sccm. The residual stress is varied from −0.15 GPa to −0.34 GPa in the range of 10-50 sccm. The root-mean-square (rms) surface roughness is changed from 2.64 nm to 2.74 nm as the oxygen flow rate increases. The results show that the oxygen flow rate has significant influence on the electrical resistivity, residual stress, and surface roughness of the ITO thin film.

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“…12). The two peaks at 530 and 531.5 eV can be attributed to O 2− ions in the rutile structure of the Sn 4+ ion array [36] and the O 2− ions in oxygen-deficient regions [37]. The peak at 532.5 eV can be assigned to the adsorbed oxygen species [38].…”

Section: Structural Propertiesmentioning

confidence: 99%

The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering

Dang

Luc

et al. 2016

Journal of Alloys and Compounds

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A new investigation of oxygen flow influence on ITO thin films by magnetron sputtering

Cited by 101 publications

References 37 publications

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering

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