The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering

Dang, Huu Phuc; Luc, Quang Ho; Le, Van Hieu; Le, Tran

doi:10.1016/j.jallcom.2016.06.236

Cited by 49 publications

(14 citation statements)

References 34 publications

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“…This is because that oxygen vacancies and free electrons were generated after SnO 2 was reduced by aluminum . Oxygen molecules would be absorbed onto the surface by capturing free electrons from SnO 2− x . Therefore, as more oxygen deficiencies are generated, higher surface oxygen concentration can be observed.…”

Section: Resultsmentioning

confidence: 99%

Defect Engineering in Two Common Types of Dielectric Materials for Electromagnetic Absorption Applications

Quan

Shi

Ong

et al. 2019

Adv Funct Materials

507

162

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(1 of 10)Dielectric materials are greatly desired for electromagnetic absorption applications. Lots of research shows that conduction loss and polarization are two of the most important factors determining complex permittivity. However, the detailed dissipation mechanisms for the improved microwave absorption performance are often based on semiempirical rules, lacking practical data relationships between conduction loss/polarization and dielectric behaviors. Here, a strategy of introducing point defects is used to understand such underlying relationships, where polarizability and conductivity are adjustable by manipulating oxygen deficiency or heteroatoms. Based on first principles calculations and the applied oxygendeficient strategy, dielectric polarization is shown to be dominant in determining the permittivity behaviors in semiconductors. Meanwhile, the presented nitrogen doping strategy shows that conduction loss is dominant in determining the permittivity behavior in graphitized carbon materials. The validity of the methods for using point defects to explore the underlying relations between conduction loss/polarization and dielectric behaviors in semiconductor and graphitized carbon are demonstrated for the first time, which are of great importance in optimizing the microwave absorption performance by defect engineering and electronic structure tailoring.

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Section: Resultsmentioning

confidence: 99%

Defect Engineering in Two Common Types of Dielectric Materials for Electromagnetic Absorption Applications

Quan

Shi

Ong

et al. 2019

Adv Funct Materials

507

162

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“…The lowest values of R sh = 6.82 Ω and ρ = 0.4 × 10 − 3 Ω cm are found in 6-at% Zr-doped SnO 2 film. In addition, a good efficiency can be synthesized by various deposition techniques such as electron beam evaporation [21], magnetron sputtering [22], atomic layer deposition [23], chemical vapor deposition [24], and pulsed laser deposition [25]. Compared to the above techniques, spray pyrolysis is one of the best owing to its low cost, homogeneous growth on large-area substrates, and easy control of the chemical composition of thin film.…”

Section: Introductionmentioning

confidence: 99%

Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells

Reddy¹,

Akkera

Sekhar

et al. 2017

Appl. Phys. A

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“…Trong đó, SnO 2 là vật liệu TCOs được xem là ứng cử viên đầy hứa hẹn do sở hữu các tính chất nổi trội như bền cơ học, hóa học, vật lý và thân thiện môi trường. SnO 2 đạt được tính chất điện loại p bằng cách pha tạp Al, Ga, Zn, B hay In [15][16][17][18][19] . Tuy nhiên, hiện tượng bù điện tích xảy ra giữa khuyết oxy (Vo) và các vị trí tạp chất nhận kim loại luôn tồn tại trong SnO 2 loại p pha tạp kim loại, nghĩa là các điện tử đóng góp từ Vo không tham gia vào quá trình dẫn điện mà bị bắt giữ bởi các vị trí tạp chất này vì vậy nồng độ lỗ trống luôn bị giới hạn.…”

Section: Giới Thiệuunclassified

“…Độ dày màng được xác định bằng phần mềm mô phỏng Scout bằng làm khớp phổ truyền qua UV-VIS với mô hình được xây dựng. Ngoài ra, kết quả thông số quang học của màng NTO như chiết suất, hệ số tắt thu được từ kết quả mô phỏng bằng phần mềm Scout16 . Các màng có bề dày được thay đổi từ 320, 420, 520, 620 và 720 nm và được ký hiệu mẫu NTO -x (x = 320, 420, 520, 620 và 720).…”

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“…Nghĩa là khi chất lượng tinh thể của màng được cải thiện sẽ ảnh hưởng đến các thông số như bậc tinh thể và mật độ xếp chặt của màng tăng đồng thời các sai hỏng bên cạnh tâm hấp thụ trong màng giảm. Vì vậy, chiết suất của màng NTO tăng và hệ số tắt giảm tương ứng với bề dày tăng, hiện tượng này cũng được quan sát ở công trình Dang et al16 .…”

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Influence of thickness on the structure and electrical, optical properties of N-doped SnO2 film

Tùng¹,

Dang²,

2020

Sci. Tech. Dev. J.- Eng. Tech.

Self Cite

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N-doped SnO2 films with varying thickness (320, 420, 520, 620, and 720 nm) were deposited at 300oC in mixed – gas sputtering Ar/N (1:1) using DC magnetron sputtering. Influence of thickness on structure, optical constants (refractive index or extinction coefficient), and electrical properties were investigated by methods such as X-ray diffraction, Uv-Vis spectra, and Hall measurement. The results show that crystalline quality and optical constants improve with increasing thickness. Specifically, NTO – 620 film has the best crystal structure and maximum values such as crystal size, refractive index, and carrier mobility, as well as the lowest extinction coefficient. Also, NTO films have a cubic structure with (111) peak as the preferred peak. Besides, the hole mobility increases with the increase of the thickness and reaches the maximum value of 14.95 cm2V-1s-1 for NTO – 620 films. The electrical properties of p-type NTO films were verified by X-ray electron spectroscopy (XPS) and I-V characteristic of p – NTO/n – Si heterojunction under illumination. P-type NTO – 620 films were fabricated on n-type Si substrate had a light-to-dark current ratio of 58 at - 6V, these results showed that p-type NTO films might have a promising future in optical sensors applications.

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The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering

Cited by 49 publications

References 34 publications

Defect Engineering in Two Common Types of Dielectric Materials for Electromagnetic Absorption Applications

Defect Engineering in Two Common Types of Dielectric Materials for Electromagnetic Absorption Applications

Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells

Influence of thickness on the structure and electrical, optical properties of N-doped SnO2 film

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