2014 International Symposium on Next-Generation Electronics (ISNE) 2014
DOI: 10.1109/isne.2014.6839372
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A new interface-trapped-charge-degraded subthreshold current model for cylindrical, surrounding-gate (CSRG) MOSFETs

Abstract: IntroductionITRS has revealed that the implantation of non-classical CMOS structures are needed to overcome the difficult challenges when the semiconductor technology node is below 16nm. It also indicates that the multiple-gate (MG) MOSFETs with the strong field confinement, prominent volume conduction, and high packing density can be the promising candidates for the future CMOS application. The novel structures for the surrounding-gate (SRG) MOSFETs with the high performance and scalability can be used for th… Show more

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