A new inorganic EUV resist with high-etch resistance

Trikeriotis, Markos; Krysak, Marie; Chung, Yeon Sook; Ouyang, Can; Cardineau, Brian; Brainard, Robert L.; Ober, Christopher K.; Giannelis, Emmanuel P.; Cho, Kyoungyong

doi:10.1117/12.916384

Cited by 64 publications

(65 citation statements)

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“…Scum improvement study with a Zr type metal oxide photoresist A recent challenge for Zr type metal oxide photoresist has been scum improvement for dense patterns. Patterning performance of a semi-dense line pattern seems to be promising as reported previously [9]. However, severe scum in the unexposed area was observed when a 1:1 dense pattern was checked.…”

Section: Photoresist Film Formationmentioning

confidence: 74%

Recent Progress in EUV Metal Oxide Photoresists

Kasahara

Kosma

et al. 2017

J. Photopol. Sci. Technol.

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EUV lithography is a promising candidate for the manufacturing of semiconductor devices for the 7 nm node and beyond. The success of any lithography depends on the availability of a suitable resist with high resolution, sensitivity and low LWR. Though polymer type CAR (chemically amplified resist) is the current standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. To meet this target, metal oxide photoresists have been designed and lithographic properties have been studied. In this paper, scum elimination studies with dissolution rate acceleration concepts and new metal core applications are described.

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Section: Photoresist Film Formationmentioning

confidence: 74%

Recent Progress in EUV Metal Oxide Photoresists

Kasahara

Kosma

et al. 2017

J. Photopol. Sci. Technol.

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“…1,4,18,19) A number of research groups have also shown the potential of unconventional inorganic 5,11) resists in further stretching these resolution limits. However, as discussed in previous chapters, concurrently achieving high resolution with the set of LWR/LER and sensitivity targets remains a challenge.…”

Section: Resist Processingmentioning

confidence: 99%

“…In particular, the effect and possible solutions to the trade-off relationship between EUV resist targets, namely, resolution, LWR/LER, and sensitivity, which have been constant topics in EUVL, [8][9][10]14,17) are described and reviewed. Recent works on resist materials focusing on conventional and nonconventional chemical platforms 1,4,5,[11][12][13]18,19) are also discussed. A review of proposed alternative resist processes, observed to focus mainly on the difficult issue of LWR/LER, is also presented.…”

Section: Introductionmentioning

confidence: 99%

“…Recent advances in these materials and process technologies are largely credited to the cooperation and focused efforts of various sectors of the resist community (e.g., industry consortia, universities, and material/ tool manufacturers). 1,[4][5][6][7][8][9][10] Specifically, industry consortia such as Selete, SEMATECH, IMEC, and recently, EIDEC have and continue to promote very conducive research environments for device manufacturers, universities, resist resin/material suppliers, and tool manufacturers. Such collaborations have led to the investigation and realization of new and exciting resist platforms 5,[11][12][13] and processes.…”

Section: Introductionmentioning

confidence: 99%

“…1,[4][5][6][7][8][9][10] Specifically, industry consortia such as Selete, SEMATECH, IMEC, and recently, EIDEC have and continue to promote very conducive research environments for device manufacturers, universities, resist resin/material suppliers, and tool manufacturers. Such collaborations have led to the investigation and realization of new and exciting resist platforms 5,[11][12][13] and processes. 3,14,15) These works have also shown a number of issues and challenges that need to be considered as the semiconductor industry moves to more stringent technology nodes.…”

Section: Introductionmentioning

confidence: 99%

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Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

163

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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Enhanced Solubility of Zirconium Oxo Clusters from Diacetoxyzirconium(IV) Oxide Aqueous Solution as Inorganic Extreme‐Ultraviolet Photoresists

Kataoka

Sue

2022

Eur J Inorg Chem

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Metal oxo clusters have drawn a great deal of attention as the extreme‐ultraviolet (EUV) photoresists. However, industrial implementation in the next‐generation lithography demands further improvements in their sensitivity and resolution. In this study, a zirconium oxo cluster with methacrylate and acetate ligands was synthesized from diacetoxyzirconium(IV) oxide aqueous solution for use as EUV photoresist materials. The obtained Zr oxo cluster, consisting of a Zr core and methacrylate and acetate ligands, was similar in size to Zr6O4(OH)4(methacrylate)12 cluster, but much more soluble in a variety of organic solvents. Open‐frame exposure tests revealed that the Zr oxo cluster served as a negative tone photoresist with a sensitivity greater than that of Zr6O4(OH)4(methacrylate)12 cluster. At a dose of 22 mJ/cm2 in the absence of photoacid generators, the Zr oxo cluster film resolved a pattern 15 nm in width, which is sufficiently low to meet the current technological requirements.

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A new inorganic EUV resist with high-etch resistance

Cited by 64 publications

References 0 publications

Recent Progress in EUV Metal Oxide Photoresists

Recent Progress in EUV Metal Oxide Photoresists

Resist Materials and Processes for Extreme Ultraviolet Lithography

Enhanced Solubility of Zirconium Oxo Clusters from Diacetoxyzirconium(IV) Oxide Aqueous Solution as Inorganic Extreme‐Ultraviolet Photoresists

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