A New Highly Power-Efficient Inverse Class-D PA for NB-IoT Applications

Harifi-Mood, Mehrdad; Bijari, Abolfazl; Alizadeh, Houshang; Kandalaft, Nabeeh

doi:10.1109/ccwc47524.2020.9031169

Cited by 7 publications

(1 citation statement)

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“…We are able to report the best measured peak PAE in literature compared to other CMCD PAs in CMOS. Our design also utilizes much less area due to a less number of passive elements; by only using 2 inductors compared to other designs using 5 such as in [12]. Other technologies such as GaAs HBT and GaN are able to report higher efficiencies and output power on the expense of cost and integration capabilities such as in [4], [13] at lower frequency bands.…”

Section: A Comparison With State-of-the-art Cmcd Pasmentioning

confidence: 99%

A 28-GHz Cascode Inverse Class-D Power Amplifier Utilizing Pulse Injection in 22-nm FDSOI

et al. 2020

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Current Mode Class-D (CMCD) Power Amplifiers are of particular interest in outphasing transmitters or Doherty configuration. This is because the output capacitance can be absorbed in the RLC output matching network and 100% theoretical efficiency. In this paper, a 28 GHz current mode (inverse) Class-D power amplifier was simulated, implemented, and measured in 22nm FDSOI. In order to overcome the breakdown voltages of the devices, the amplifier employs a stacked topology, which enables higher output powers and efficiency. The stacked transistors are also pulse injected to further increase the efficiency. Measurement results shows a peak PAE of 46%, peak drain efficiency (DE) of 71% and a saturated output power of 19 dBm. The implemented CMCD PA reports the best performance in literature compared to other CMOS based CMCD PAs.INDEX TERMS Current mode class-D, FDSOI CMOS, high efficiency, power added efficiency (PAE), power amplifier (PA), stacking.

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Section: A Comparison With State-of-the-art Cmcd Pasmentioning

confidence: 99%