A new high speed and high efficiency GaN HEMT switching cell for envelope tracking modulators

Disserand, Anthony; Bouysse, Philippe; Martin, Audrey; Quéré, Raymond; Jardel, Olivier; Lapierre, L.

doi:10.1109/eumc.2016.7824333

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…VgH and VeH are DC biased, INH is the signal input. Parts of the predriver for the lower push-pull transistor (V5H) are closely related to a high-speed switching stage published in [14].…”

Section: Digital Outphasing Pa Designmentioning

confidence: 99%

GaN digital microwave outphasing PA

Hoffmann

Wentzel

Flisgen

et al. 2020

Int. J. Microw. Wireless Technol.

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This paper presents a novel GaN-based digital outphasing power amplifier (PA) for the 800 MHz range. The PA reaches a maximum output power of 5.8 W at 30 V final-stage (FS) drain supply voltage. A novel output combiner circuit is used and efficiency is improved by resonant commutation of the FSs and optimized driver circuits for the two GaN push-pull FSs. 3D electromagnetic simulation of output network has been conducted to extract an equivalent circuit model and to access full information in terms of functionality and broadband impedance characteristics for optimized outphasing operation in the final design. Measured total efficiencies (ηtot) of 59 and 25% at 0 and 10 dB power back-off are achieved, respectively, fitting the simulation quite well. The proposed digital outphasing module is a promising candidate for fully digitized base-station architectures in future wireless communications.

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“…VgH and VeH are DC biased, INH is the signal input. Parts of the predriver for the lower push-pull transistor (V5H) are closely related to a high-speed switching stage published in [14].…”

Section: Digital Outphasing Pa Designmentioning

confidence: 99%

GaN digital microwave outphasing PA

Hoffmann

Wentzel

Flisgen

et al. 2020

Int. J. Microw. Wireless Technol.

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“…The switching cell topology takes advantage of a minimum number of components for the reduction of switching power losses. We have described and validated the design approach of the supply modulator circuit with measurements in [6]. In order to apply dynamic supply voltage to the SVG power amplifier as shown in Fig.…”

Section: B Multi-level Supply Modulatormentioning

confidence: 99%

High speed and highly efficient S-band 20 W mixerless vector power modulator

Dasgupta

Disserand

Nébus

et al. 2017

2017 IEEE MTT-S International Microwave Symposium (IMS)

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This paper presents a performance evaluation of an original highly efficient and linear GaN-HEMT Vector Power Modulator (VPM) based on the design of a two-stage saturated variable gain (SVG) amplifier and a multi-level discrete supply modulator (SM). The proposed novel architecture for transforming a digital baseband data stream into an RF Vector modulated power waveform (RF Power DAC) is validated using a specific laboratory test bench. The main objective of this study is to merge signal modulation and DC to RF energy conversion functions into a single and compact GaN based mixer-less circuit. Using high-voltage 50 V GaN technology, a 20 W S-band vector power modulator having overall average PAE of around 40 % is reported. The concept demonstrator is experimentally validated up to 100 Msymbols/sec 16-QAM modulation scheme. Functional time alignment with phase and amplitude compensation procedure focusing on measured constellation at 40 Msymbols/sec enables to reach excellent EVM performances of around 3.2 %.

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