A new generation of intelligent power devices for motor drive applications

Abstract

Photo 1 shows the developed high-frequency SIT chip ( an example from the THF-50 Series).This chip has a large area (10m X 1Om) in order to achieve high-power operation.To meet the requirement to improve the high-frequency characteristics of the SIT while maintaining a large channel area, the gate length was reduced to a a large reduction from that in conventional chips.The TtlF Series has a number of these chips encased in a large metal housing.Photo 2 shows the appearance of these high-frequen-CY high-power SIT's housed in metal casing, as well as two circuits incorporated into molded modules via A1N insulated substrates.The TtM Series consists of SITS with further reduced input capacitance.As the chip area is increased to obtain higher power. capacitances distributed between gate to source and between gate t o drain also increase.AS a result, more time is needed to charge and discharge these capacitances, thus restricting the devices operation to lower frequencies.In addittion, operation at high frequencies necessitates a lowering of the driving impedance, thus making the gate driver circuitry more complex. length of 1 mm ; u m 6 8 8 8 um 6 6 8 8In order to commercialize SIT's with even higher breakdown voltage and power, it is necessary to retain the advantages of the THF Series and reduce the capacitances of the device. This has been accomplished by developing the following technologies: 1) Iligh-puri ty epitaxial growth technology that results on a lower concentrations of impurities with fewer crystal defects and thus a thicker drain layer has been obtained Technology for stable diffusion with high doping concentration and good doping distribution, giving d is tort ion 1 ess gates 3) Epitaxial growth technology for low doping concentration of the source layers 4) High doping concentration buried gate forming technology with high accuracy 5) Fine structure processing and surface protection t ec hno 1 ogy Cross-sectional structures of the SIT chips interious are shown in Fig. 2 and. structural details in Table 1. Structural characteristics for the 2SK180 SIT 300 W type and the 2SK182 SIT 1 KW type are also shown for comparison. c532)

Power Electronic Systems

“…14.11 IPM module without base plate from Semikron -an input converter, an inverter, a brake chopper, and a SOI driver assembled on a single substrate [Grs08] Fig. 14.12 Mitsubishi-IPM for engine ratings up to 30 kW [Mot93] feature makes the driver immune to static and dynamic reference potential changes up to ±20 V.…”