2011
DOI: 10.1109/tpel.2010.2086489
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A New Filtering Technique That Makes Power Transistors Immune to EMI

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Cited by 12 publications
(6 citation statements)
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“…An irreparable result of the attack is causing a short circuit to burn the converter. In this work, we will demonstrate that an arbitrary audio signal can be injected into a speaker system, in which the nonlinearities of the audio amplifier is exploited (see details in Section 6.2); furthermore, we will show that a motor control system can be precisely controlled, in which the imperfection of transistors [4,5,13] are exploited (see details in Section 6.3). All of these show that it is not difficult to use electromagnetic signal injection attacks to manipulate the actuator behaviors precisely.…”
Section: Circuit Response To Injected Signalmentioning
confidence: 99%
“…An irreparable result of the attack is causing a short circuit to burn the converter. In this work, we will demonstrate that an arbitrary audio signal can be injected into a speaker system, in which the nonlinearities of the audio amplifier is exploited (see details in Section 6.2); furthermore, we will show that a motor control system can be precisely controlled, in which the imperfection of transistors [4,5,13] are exploited (see details in Section 6.3). All of these show that it is not difficult to use electromagnetic signal injection attacks to manipulate the actuator behaviors precisely.…”
Section: Circuit Response To Injected Signalmentioning
confidence: 99%
“…Hamza et al [19], Ye et al [20], Wang et al [21], Bona and Fiori [32], Hamza et al [33], Amini [34], Luo et al [35] primarily discussed about EMI filter for the DC-fed threephase motor drive system and APF system. The authors concluded that, multilevel inverters are able to make direct connection of the APF to high rated voltage network.…”
Section: ) Emi Filter Designmentioning
confidence: 99%
“…Furthermore, the complete package model has been taken into account but here, for the sake of simplification, only the dominant components of such a model (the L PX bonding parasitics inductances) are considered. In [8] it has been shown that the susceptibility analysis to RFI affecting the drain terminal of a LS power transistor switched-off (switched on) steadily can be performed with good accuracy referring to small-signal equivalent circuits. Specifically, power transistor switching failures take place when the disturbance superimposed onto the gate-source voltage cross-over the transistor threshold.…”
Section: Mos Transistor Susceptibility To Emimentioning
confidence: 99%
“…This model will be compared with and related to the well known lumped model proposed by Razavi et al [10] and used in [7,8].…”
Section: Mos Transistor Susceptibility To Emimentioning
confidence: 99%