Solid-State Electronics
 1994
DOI: 10.1016/0038-1101(94)90129-5
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A new experimental method (E-plot) to characterize the substrate-current and the saturation-voltage of fresh and hot-electron-damaged NMOSFETs

Shi-Ho Kim
1
,
Kyeong‐Sik Min
2
,
Kwyro Lee
3
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