1996
DOI: 10.1016/0038-1101(95)00074-7
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Time dependent hot-carrier induced interface state generation in deep submicron LDD nMOSFETs

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Cited by 7 publications
(2 citation statements)
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“…Our model is able to describe the time behavior of the interface state generation and is essentially different from that of Kim et al [10]. It model enables us to predict interface state generation in NMOSFETs for different bias conditions and geometries, based upon two (constant) parameters A=229pA and C=8.14, which hold for all our experiments so far.…”
Section: Model For Interface States Creation Includingmentioning
confidence: 98%
“…Our model is able to describe the time behavior of the interface state generation and is essentially different from that of Kim et al [10]. It model enables us to predict interface state generation in NMOSFETs for different bias conditions and geometries, based upon two (constant) parameters A=229pA and C=8.14, which hold for all our experiments so far.…”
Section: Model For Interface States Creation Includingmentioning
confidence: 98%
“…Furthermore, recent theoretical studies using the hydrodynamic (HD) and full Langevin-Boltzmann equation (LBE) noise models, demonstrated that the channel noise is dominated by the source-side contribution due to higher impedance field near the source junction[29,51]. Hence, whether the channel noise is dominant by the source or drain side is still controversial.On the other hand, as device aggressively scales down, hot carrier (HC) induced degradation emerges as one of the most serious reliability issues in MOSFETs[52][53][54][55][56]. A clear understanding of hot-carrier effects in actual circuit environment is essential to ensure product reliability in the early stage of process optimization.…”
mentioning
confidence: 99%