A new epitaxial BaSnO3buffer layer for YBa2Cu3O7-deltathin films on MgO substrates

Mukaida, Masashi; Takano, Y.; Chiba, Kazuaki; Moriya, Takuo; Kusünoki, Masanobu; Ohshima, Shigetoshi

doi:10.1088/0953-2048/12/11/359

Cited by 14 publications

(6 citation statements)

References 5 publications

(4 reference statements)

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“…Even so, the required energies per pulse are fairly high and most readily achieved with excimer lasers [39]. Lasers using KrF excimers (248 nm, typically 20-35 ns pulse duration) have been used most often in PLD, but successful film growth has also been achieved using ArF (193 nm) [40][41][42] and XeCl (308 nm) [43][44][45][46][47] excimers.…”

Section: Ablation and Plasma Formationmentioning

confidence: 99%

Recent advances in pulsed-laser deposition of complex oxides

Christen

Eres

2008

J. Phys.: Condens. Matter

249

174

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Pulsed-laser deposition (PLD) is one of the most promising techniques for the formation of complex-oxide heterostructures, superlattices, and well controlled interfaces. The first part of this paper presents a review of several useful modifications of the process, including methods inspired by combinatorial approaches. We then discuss detailed growth kinetics results, which illustrate that 'true' layer-by-layer (LBL) growth can only be approached, not fully met, even though many characterization techniques reveal interfaces with unexpected sharpness. Time-resolved surface x-ray diffraction measurements show that crystallization and the majority of interlayer mass transport occur on timescales that are comparable to those of the plume/substrate interaction, providing direct experimental evidence that a growth regime exists in which non-thermal processes dominate PLD. This understanding shows how kinetic growth manipulation can bring PLD closer to ideal LBL than any other growth method available today.

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Section: Ablation and Plasma Formationmentioning

confidence: 99%

Recent advances in pulsed-laser deposition of complex oxides

Christen

Eres

2008

J. Phys.: Condens. Matter

249

174

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“…BaSnO 3 with a cubic perovskite crystal type structure (a = 4.12 Å) has been investigated as a buffer layer on MgO substrates for growing smoother YBCO films for microwave applications [13]. Although BaSnO 3 has been studied for flux pinning enhancements in melt processed YBCO [14,15], here we provide an initial demonstration of effectively incorporating BaSnO 3 nanoparticles as pinning material in YBCO films.…”

Section: Introductionmentioning

confidence: 98%

Flux pinning enhancement in YBa₂Cu₃O_7−xfilms with BaSnO₃nanoparticles

Varanasi,

Barnes,

Burke

et al. 2006

Supercond. Sci. Technol.

135

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for Information PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION University of Dayton Research Institute ABSTRACTNanoparticles of BaSnO 3 were incorporated into YBa 2 Cu 3 O 7-x (YBCO) films on LaAlO 3 substrates for magnetic flux pinning enhancements. More than an order of magnitude improvement in the high field magnetization J c at 6 T at 77 K was observed as compared to regular YBCO films. The irreversibility field (H irr ) was increased to 8.5 T at 77 K and to 13.4 T at 65 K. The in-field transport current measurements confirmed an order of magnitude improvement in high fields. More than an order of magnitude improvement in the high field magnetization J c at 6 T at 77 K was observed as compared to regular YBCO films. The irreversibility field (H irr ) was increased to 8.5 T at 77 K and to 13.4 T at 65 K. The in-field transport current measurements confirmed an order of magnitude improvement in high fields. The angular dependence of the J c data at 1 T showed that J c H c is 1.3 times higher than J c H ab indicating the presence of c-axis correlated defects. Transmission electron microscopy studies revealed the presence of a large density of uniformly distributed ∼10 nm sized BaSnO 3 precipitates and strain fields around them. A dual sector pulsed laser deposition target is used to produce the films, thus eliminating reactions between BaSnO 3 and YBCO during the target preparation stage, but may allow the BaSnO 3 to react locally and create defects that act as pinning centres.

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“…But it is reported that for the 123 films deposited on MgO, there exists an inter layer of barium salt at the interface if the temperature of processing is above 700 • C [10]. Also another problem reported with the films grown on MgO is the presence of 45 • in-plane misaligned grains [11,12], which used to degrade the microwave properties of the 123 superconductor films grown on MgO substrates [13]. One solution to these problems is to use a suitable buffer layer over MgO substrate for the growth of 123 superconductor films.…”

Section: Introductionmentioning

confidence: 99%

Thermal Etching of 6H–SiC Substrate Surface

Nishiguchi

Ohshima

Nishino

2003

Jpn. J. Appl. Phys.

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We report the in situ epitaxial growth of NdBa 2 Cu 3 O 7−δ thin films on (100) MgO substrates with Ba 2 NdTaO 6 , a new dielectric buffer layer, by pulsed laser deposition for the first time. It is found that by using Ba 2 NdTaO 6 dielectric material as a buffer layer for the growth of NdBa 2 Cu 3 O 7−δ films over (100) MgO substrate, the in-plane misalignment of the NdBa 2 Cu 3 O 7−δ grains can be eliminated. The NdBa 2 Cu 3 O 7−δ films grown on Ba 2 NdTaO 6 buffered MgO gave a zero resistance superconducting transition of 93.5 K, which was remarkably higher than the NdBa 2 Cu 3 O 7−δ films grown on MgO. Also the NdBa 2 Cu 3 O 7−δ films grown on Ba 2 NdTaO 6 buffered MgO substrates show a narrower superconducting transition width (∼0.5 K) and better normal state metallicity (R 300 /R 100 ) than the NdBa 2 Cu 3 O 7−δ films grown on bare MgO substrate. Our results indicate that Ba 2 NdTaO 6 is a promising buffer layer material for the growth of epitaxial NdBa 2 Cu 3 O 7−δ films on MgO substrate.

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A new epitaxial BaSnO₃buffer layer for YBa₂Cu₃O_7-deltathin films on MgO substrates

Cited by 14 publications

References 5 publications

Recent advances in pulsed-laser deposition of complex oxides

Recent advances in pulsed-laser deposition of complex oxides

Flux pinning enhancement in YBa₂Cu₃O_7−xfilms with BaSnO₃nanoparticles

Thermal Etching of 6H–SiC Substrate Surface

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A new epitaxial BaSnO3buffer layer for YBa2Cu3O7-deltathin films on MgO substrates

Cited by 14 publications

References 5 publications

Recent advances in pulsed-laser deposition of complex oxides

Recent advances in pulsed-laser deposition of complex oxides

Flux pinning enhancement in YBa2Cu3O7−xfilms with BaSnO3nanoparticles

Thermal Etching of 6H–SiC Substrate Surface

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A new epitaxial BaSnO₃buffer layer for YBa₂Cu₃O_7-deltathin films on MgO substrates

Flux pinning enhancement in YBa₂Cu₃O_7−xfilms with BaSnO₃nanoparticles