Thermal Etching of 6H–SiC Substrate Surface

Nishiguchi, Taro; Ohshima, Satoru; Nishino, Seiji

doi:10.1143/jjap.42.1533

Cited by 9 publications

(5 citation statements)

References 23 publications

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“…which corresponds to previous reports. 23,24) Regardless of the increase in the thickness of the carbon layer on the 6H-SiC Si-face with increasing thermal treatment time in He ambient above 1400 C, a constant thermal decomposition rate depending on the treatment period of time was determined. This indicates that the thermal decomposition reaction on the 6H-SiC Si-face is limited not by the diffusion of Si atoms in the carbon layer but by the surface reaction.…”

Section: Resultsmentioning

confidence: 99%

In situGravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face

Akiyama¹,

Ishii²,

Abe³

et al. 2009

Jpn. J. Appl. Phys.

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The thermal decomposition and hydrogen etching of a 6H-SiC(0001) Si-face were directly monitored using an in situ gravimetric monitoring system. The monitoring of the weight change of the 6H-SiC Si-face using this system clarified the dependences of the thermal decomposition and hydrogen etching rates on the substrate temperature. Although the thermal decomposition of the 6H-SiC Si-face above 1400 C generated a graphite layer since only the Si atom directly desorbs from the surface, the etching of the 6H-SiC Si-face by hydrogen did not form this layer, and both Si and C atoms react with hydrogen. Moreover, the surface reaction of the 6H-SiC Si face with H 2 and the resultant surface morphology were found to change at approximately 1250 C. #

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Section: Resultsmentioning

confidence: 99%

In situGravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face

Akiyama¹,

Ishii²,

Abe³

et al. 2009

Jpn. J. Appl. Phys.

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“…Commercial, mechanically polished SiC wafers are often damaged and show a high density of scratches in AFM (Figure 43a). Hydrogen etching [153][154][155][156][157], thermal etching [158][159][160][161], and tetrafluorosilane (SiF4) etching [162] are known to improve this situation by removing several hundred nanometers of bulk material. Here we present some hydrogen etching studies.…”

Section: Substrate Preparation By Etchingmentioning

confidence: 99%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

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“…Namely, well-defined terraces emerge on a vicinal SiC surface at 1200 °C, when step-bunching is avoided, or it may be observed with higher offcut angles. A severe degradation takes place at 1800 °C [ 20 , 21 ]. Between surface restructuring and degradation, there are the most favorable conditions for obtaining atomically smooth terraces [ 13 , 22 , 23 ].…”

Section: Methodsmentioning

confidence: 99%

Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth

et al. 2022

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The synthesis of graphene by the graphitization of SiC surface has been driven by a need to develop a way to produce graphene in large quantities. With the increased use of thermal treatments of commercial SiC substrates, a comprehension of the surface restructuring due to the formation of a terrace-stepped nanorelief is becoming a pressing challenge. The aim of this paper is to evaluate the utility of X-ray reflectometry and grazing-incidence off-specular scattering for a non-destructive estimate of depth-graded and lateral inhomogeneities on SiC wafers annealed in a vacuum at a temperature of 1400–1500 °C. It is shown that the grazing-incidence X-ray method is a powerful tool for the assessment of statistical parameters, such as effective roughness height, average terrace period and dispersion. Moreover, these methods are advantageous to local probe techniques because a broad range of spatial frequencies allows for faster inspection of the whole surface area. We have found that power spectral density functions and in-depth density profiles manifest themselves differently between the probing directions along and across a terrace edge. Finally, the X-ray scattering data demonstrate quantitative agreement with the results of atomic force microscopy.

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Thermal Etching of 6H–SiC Substrate Surface

Cited by 9 publications

References 23 publications

In situGravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face

In situGravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth

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