Symposium Non-Volatile Memory Technology 2005.
DOI: 10.1109/nvmt.2005.1541401
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A new embedded NVM technology for lowpower, high temperature, rad-hard applications

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Cited by 19 publications
(11 citation statements)
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“…One legitimate reason for this can be drawn from rarefaction of the surrounding air medium. Knudsen number, K n for the airflow within the small actuation gap can be defined as [27] 0 d Ȝ K n (12) where O is mean free path of molecules in air. At ambient conditions O has a value 64 nm [27].…”
Section: A Laser Doppler Vibronmetry Testmentioning
confidence: 99%
See 1 more Smart Citation
“…One legitimate reason for this can be drawn from rarefaction of the surrounding air medium. Knudsen number, K n for the airflow within the small actuation gap can be defined as [27] 0 d Ȝ K n (12) where O is mean free path of molecules in air. At ambient conditions O has a value 64 nm [27].…”
Section: A Laser Doppler Vibronmetry Testmentioning
confidence: 99%
“…Extensive studies of nano-elecromechanical logic gates have been very recently reported [8][9][10][11]. Development of one time [12] and multi-time [12,13] programmable nonvolatile memory using electrostatically actuated cantilever has also been demonstrated. In [14] digital logic implementation has been demonstrated using three-layer shuttle electrode and twolayer torsional electrode.…”
Section: Introductionmentioning
confidence: 99%
“…The leading NVM technology is based on floating gate transistors, which, however, have limited performances when exposed to high temperature (T > 200°C) [1], mostly because of charge leakage. Various designs of storage-layer-free electromechanical NVM actuated by electrostatic forces are proposed [2]- [4]. Data retention is typically obtained by adhesion forces between two smooth surfaces in contact [5].…”
mentioning
confidence: 99%
“…Therefore, one-time programmables (OTPs) [4]- [6] are proposed, especially for rugged applications (high temperature, rad-hard, and high vibrations). The antifuse geometry proposed in this letter consists of a twoterminal structure: one movable beam and one fixed electrode.…”
mentioning
confidence: 99%
“…Two realizations of a micromechanical memory are demonstrated: compensation of beam asymmetry in the prebuckling phase and forced snap through of the postbuckled beam by electrostatic forces. In contrast to mechanical memory based on electrostatic pull in of single clamped cantilever beams, 7,8 the presented memory is contactless and thus less sensitive to wear.…”
mentioning
confidence: 99%