A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation

Dreesen, R.; Croes, Kristof; Manca, Jean; Ceuninck, W. De; Schepper, L. De; Pergoot, A.; Groeseneken, G.

doi:10.1016/s0026-2714(00)00225-0

Cited by 24 publications

(8 citation statements)

References 12 publications

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“…15. This mobility saturation model is also described in [13] and [14] for MOSFET and in [8] for LDMOS structure. The LDMOS degradation behavior and trap properties in the three stress modes are summarized in Table I.…”

Section: B V G ∼ (1/2) V D Stress Modementioning

confidence: 99%

Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Cheng

Lin

Wang

et al. 2006

IEEE Trans. Device Mater. Relib.

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Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel threeregion charge-pumping technique is proposed to characterize interface trap (N it ) and bulk oxide charge Q ox creation in the channel and in the drift regions separately. The growth rates of N it and Q ox are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum I g stress causes the largest drain current and subthreshold slope degradation because of both N it generation in the channel and Q ox creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation.Index Terms-Hot-carrier degradation, lateral diffused MOS (LDMOS), three-region charge pumping (CP).

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Section: B V G ∼ (1/2) V D Stress Modementioning

confidence: 99%

Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Cheng

Lin

Wang

et al. 2006

IEEE Trans. Device Mater. Relib.

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“…9. Knowing that the intercept P 0 = V th (V d = 0) is zero near the electrodes and a maximum in the middle of the channel, one can approximate the mean TCAD simulated dependence P 0 (X T ) with a Gaussian and derive a simple relation for the relative lateral trap position (2). Inset: standard deviation σ (1) is empirically found to be proportional to L with a coefficient α.…”

Section: Simplified Algorithmmentioning

confidence: 99%

“…Knowing the value of P 0max , one can analyze all other V th (V d ) curves from the considered data set in order to extract P 0 and sign(P 1 ) [ Fig. 9 (top)] and then apply (2) to estimate X T .…”

Section: Simplified Algorithmmentioning

confidence: 99%

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Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs

Illarionov

Bina

Tyaginov

et al. 2015

IEEE Trans. Electron Devices

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A novel method for the extraction of the lateral position of border traps in nanoscale MOSFETs is presented. Using technology computer-aided design (TCAD) simulations, we demonstrate that the dependence of the trap-induced threshold voltage shift on the drain bias is more sensitive to the lateral trap position than to the impact of random dopants. Based on this, the lateral defect position can be determined with a precision of several percent of the channel length. To demonstrate the correct functionality of our technique, we apply it to extract the lateral positions of experimentally observed traps. Although the most accurate algorithm is based on time-consuming TCAD simulations, we propose a simplified analytic expression, which allows for the extraction of the lateral trap position directly from the experimental data. While the uncertainty introduced by random dopants is <10% for the TCAD model, the additional errors introduced by the simple analytic expression still provide trap positions accurate to 5% for the devices with 20-nm channel length and 20%-25% for 100-nm-long devices.

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“…Based on the mechanism of the hot carrier degradation, the least-squares method was used to predict the lifetime of MOSFETs, considering the effect of temperature an electric stress. 20 Although the model is accurate, it is difficult to establish in a complex dynamic system. In another paper, the extended Kalman filter is used to estimate the parameters of the model and the RUL of MOSFETs, while the model is made with the degradation data of the resistance.…”

Section: Introductionmentioning

confidence: 99%

Remaining useful life prognostic of power metal oxide semiconductor field effect transistor based on improved particle filter algorithm

Yang

Zhen

et al. 2017

Advances in Mechanical Engineering

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The power metal oxide semiconductor field effect transistor is used extensively in analog circuits and digital circuits. However, it is also the highest failure rate component in the power electronics system. In order to avoid serious failures in the electrical system, it is necessary to predict the remaining useful life of the metal oxide semiconductor field effect transistor. With the aim to accurately predict the remaining useful life, this article presents an improved particle filter method, which can estimate the metal oxide semiconductor field effect transistor degradation degree by the on-resistance (Ron) changing data. This method is based on the particle filter algorithm, which is suitable for nonlinear and non-Gaussian system; at the same time, the proposed method can avoid the degeneracy phenomenon in the particle filter. First, the strong tracking Kalman filter is used as the importance function to update the particles with the latest observation in the sample process. The Metropolis-Hastings algorithm is used to introduce some new particles to guarantee the effective particle number in the resampling process. The experimental results indicate that the improved particle filter algorithm can obtain more effective remaining useful life prognostic than that of the particle filter. KeywordsRemaining useful life, metal oxide semiconductor field effect transistor, strong tracking Kalman filter, prognostic Date

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A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation

Cited by 24 publications

References 12 publications

Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs

Remaining useful life prognostic of power metal oxide semiconductor field effect transistor based on improved particle filter algorithm

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