A new deep reactive ion etching process by dual sidewall protection layer

Ohara, Junji; Kano, Kazuhiko; Takeuchi, Yukihiro; Ohya, Nobutaka; Otsuka, Yasuhiro; Akita, Seiji

doi:10.1109/memsys.2000.838529

Cited by 13 publications

(9 citation statements)

References 4 publications

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“…Next, a hole is etched with the assistance of a photoresist mask. An improved Bosch is employed for hole etching, followed by several steps to remove CF x polymers in the inside of the hole [27,28]. A SiO 2 layer is grown by thermal oxidation on the top of wafer, followed by a thermal atomic layer deposition (thALD) of Al 2 O 3 .…”

Section: Fabrication Processmentioning

confidence: 99%

A Proposal of Vertical MOSFET and Electrothermal Analysis for Monolithic 3-D ICs

et al. 2021

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In this paper, an innovative vertical MOSFET based on through-oxide via (TOV) technology is proposed for silicon-on-insulator (SOI)-based monolithic 3-D ICs. The proposed vertical MOSFET is investigated numerically. It was found that SOI can effectively reduce the parasitic capacitance, leakage current, power consumption, as well as suppress the pulse current interference of the substrate. The simulated results indicate that the proposed MOSFET possesses excellent characteristics in saturation current over 1500 μA, sub-threshold swing of 69 mV/dec, and on/off current ratio of 1.28 × 1011. Moreover, as temperature is a critical factor for the performance degradation of semiconductor devices, electrothermal simulations are conducted to predict the influence of the self-heating effect on device characteristics. The results show that device characteristics slightly deteriorate, but can still acceptable in their applications.

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Section: Fabrication Processmentioning

confidence: 99%

A Proposal of Vertical MOSFET and Electrothermal Analysis for Monolithic 3-D ICs

et al. 2021

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“…The composition of this polymer is almost the same as that of Teflon. Since Si is etched in an anisotropic manner in the RIE process, the protective film formed on the bottom of the structure groove is removed earlier than the film deposited on the side faces (3) . Accordingly, it is possible to prevent the etching from progressing in the groove width direction by making the etching rate equal to the protective film formation rate within one etching cycle, thereby etching Si in the groove depth direction only.…”

Section: Si Dry Etching Technologymentioning

confidence: 99%

Fabrication of the X-Ray Mask using the Silicon Dry Etching

Tsujii

Shimada

Tanaka

et al. 2008

JAMDSM

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The X-ray lithography of uses synchrotron radiation is one of the microprocessing structure fabrication technology. In X-ray lithography, precision of the fabricated structure is influenced by precision of the X-ray mask considerably. Conventionally, the X-ray mask was fabricated with UV lithography. However, it is difficult to fabricate the highly precise X-ray mask because of the tapering X-ray absorber. We introduces the ability of Si dry etching technology into UV lithography in order to fabricate untapered, high precision X-ray masks containing rectangular patterns. This new X-ray mask fabrication method uses a high-precision microstructure pattern formed by Si dry etching, thereby fabricating high aspect ratio, narrow line width resist microstructures that cannot be achieved by any conventional technology. An Au for the X-ray absorber is made to the groove of the structure, and it is formed by electroplating. The silicon substrate itself is used as seed layer and the structure is fabricated with the photo resist whose resistance is higher than silicon. It can be expected the gilding growth from only the bottom layer. High-density Au functions sufficiently as an absorber. Au plating was formed only from the base of the structure ditch and could bury Au of thickness 3.5µm in a narrow place of 2.7µm in width well. The fabricated structure using X-ray lithography. Highly-precise rectangular structure could be fabricated.

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“…One was DRIE with argon added to carbon-fluoride etching gases, i.e., C 4 and CHF 3 gases; the other was a novel combined process in which DRIE with a mixture of C 4 F 8 and argon gases and subsequent ultrasonic cleaning in DI water were alternately carried out. The former process means that the etching-gas composition was changed, compared with the previous conditions [7].…”

Section: Process For Control Of Groove Profilementioning

confidence: 99%

“…Li et al [1] first presented their research on the deep reactive ion etching (DRIE) of Pyrex R , but not many studies have successfully used anisotropic deep dry etching of borosilicate glass, in contrast with silicon [2][3][4] and silica [5,6]. The reason for this difference is largely due to the quite low selectivity of the etching mask used for borosilicate glass.…”

Section: Introductionmentioning

confidence: 99%

Profile control of a borosilicate-glass groove formed by deep reactive ion etching

Akashi¹,

Yoshimura²

2008

J. Micromech. Microeng.

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Deep reactive ion etching (DRIE) of borosilicate glass and profile control of an etched groove are reported. DRIE was carried out using an anodically bonded silicon wafer as an etching mask. We controlled the groove profile, namely improving its sidewall angle, by removing excessively thick polymer film produced by carbonfluoride etching gases during DRIE. Two fabrication processes were experimentally compared for effective removal of the film: DRIE with the addition of argon to the etching gases and a novel combined process in which DRIE and subsequent ultrasonic cleaning in DI water were alternately carried out. Both processes improved the sidewall angle, and it reached 85 o independent of the mask-opening width. The results showed the processes can remove excessive polymer film on sidewalls. Accordingly, the processes are an effective way to control the groove profile of borosilicate glass.

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A new deep reactive ion etching process by dual sidewall protection layer

Cited by 13 publications

References 4 publications

A Proposal of Vertical MOSFET and Electrothermal Analysis for Monolithic 3-D ICs

A Proposal of Vertical MOSFET and Electrothermal Analysis for Monolithic 3-D ICs

Fabrication of the X-Ray Mask using the Silicon Dry Etching

Profile control of a borosilicate-glass groove formed by deep reactive ion etching

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