A New Class Of Resins For Deep Ultraviolet Photoresists

Osuch, C.; Brahim, Karime; Hopf, Frederick R.; McFarland, Michael J.; Mooring, A.; Wu, Chengjiu

doi:10.1117/12.963627

Cited by 14 publications

(7 citation statements)

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“…Starting from work done at AlliedSignal [9], the rights to which were recently acquired by AZ Photoresists, maleimide copolymers have been used both in a two-component dissolution inhibition as well as in a chemically amplified DUV resist of the t-BOC deprotection type. Work done on dissolution inhibition resists formulated from maleimide/styrene copolymers and aliphatic diazoketoesters has been reported previously [1O; here we present recent results on t-BOCmaleimide/styrene copolymer based resists.…”

Section: Non-phs T-boc Systems: Maleimide/styrene-copolymer Based Resmentioning

confidence: 99%

“…The difficulty of inhibiting P4HS, or, for that matter, most other proposed non-novolak DUV binders [5,9,10], has led to alternative imaging schemes which do not rely on dissolution inhibition but employ uncapping of an acidic functionality by acid-catalyzed removal of protecting groups; most prominent among these is the t-BOC-P4HS resist originally described by researchers from IBM [4]. As an additional benefit, chemical amplification of the primary photoevent in the catalytic chain allows of achieving higher sensitivities for the catalytic deprotection schemes, a desirable feature due to the lower photon flux of DUV light sources.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

<title>Progress in DUV resins</title>

Przybilla¹,

Roeschert²,

Spieß³

et al. 1991

Advances in Resist Technology and Processing VIII

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Starting from general arguments on the relation of polymer structure, transpareiicy at 248 nm, resin hydrophilicity and resist dissolution characteristics, binder systems for novel DUV resists are presented, and the results of their lithographic evaluation are discussed. Phenolic polymers studied include homo-and copolymers of 2-, 3,-and 4-hvdroxystyrenes and of their alkyl substituted derivatives for three-component systems, as well as 2-and 4-hydroxyphenylmethacrylates for use in two-component t-BOC'-type resists. As an alternative non-phenolic resin, the peiformance of a maleimide/styrene copolymer in a two-component system is discussed.

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Section: Non-phs T-boc Systems: Maleimide/styrene-copolymer Based Resmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

<title>Progress in DUV resins</title>

Przybilla¹,

Roeschert²,

Spieß³

et al. 1991

Advances in Resist Technology and Processing VIII

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“…In Fig. 9 are presented tBOC-protected polymers evaluated as deep UV resist materials [44,[46][47][48][49][50][51].…”

Section: Evolution Of Positive Deep Uv Resistsmentioning

confidence: 99%

Evolution and Progress of Deep UV Resist Materials.

Itô

1998

J. Photopol. Sci. Technol.

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It has been almost thirty years since the first deep UV exposure was carried out and almost twenty five years since the term "deep UV lithography" was coined. Although resist systems classified as "chemical amplification resists" are the workhorse for the 248 nm deep UV lithography, the resist materials have evolved significantly in the realm of deep UV lithography as well as within the boundary of chemical amplification. This paper describes the evolution and progress of the deep UV (248-193 nm) positive resist materials that have occurred in the last quarter century.

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“…Only a few polymaleimides have been investigated their applicability as thermally stable resist materials in DUV region based on the chemical amplification concept. Those polymaleimides are the styrenic copolymers of N-(t-butyloxycarbonyl)maleimide (t-BOCMI) [2][3][4][5], t-BOC protected N-(phydroxyphenyl)maleimide [b], and N-(t-butoxy)maleimide (t-BuOMI). [7] Recently we have reported the functional polymers of N-tosyloxymaleimide (TsOMI) which generate p-toluenesulfonic acid (TsOH) effectively by DUV irradiation.…”

Section: Introductionmentioning

confidence: 99%

Terpolymers of tosyloxymaleimide for application as a polymeric photoacid generator in single-component resists.

Chung

Koo

Ahn³

1994

J. Photopol. Sci. Technol.

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Terpolymers of sulfonyloxymaleimides have been prepared as a new class of polymeric photoacid generator and their photochemical and thermal properties were investigated. The styrenic copolymers of N-tosyloxymaleimide (TsOMI) produced p-toluenesulfonic acid (TsOH) in solid state by deep UV irradiation and the amount of generated acid was determined by using a colorimetric method. Two terpolymers of TsOMI and p-(t-butyloxycarbonyloxy)styrene showed the capability of a single-component, chemically amplified resist system in deep UV region. Positive-and negative-tone images were obtained with sensitivity of 50 mJ/cm2.

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A New Class Of Resins For Deep Ultraviolet Photoresists

Cited by 14 publications

References 0 publications

<title>Progress in DUV resins</title>

<title>Progress in DUV resins</title>

Evolution and Progress of Deep UV Resist Materials.

Terpolymers of tosyloxymaleimide for application as a polymeric photoacid generator in single-component resists.

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