A New Approach to Solar Hydrogen Production: a ZnO–ZnS Solid Solution Nanowire Array Photoanode

Abstract

A ZnO–ZnS solid solution nanowire array photoanode is developed based on an alternative sensitization of a ZnO–ZnS solid solution nanowire array for solar hydrogen generation with considerably enhanced photocurrent – more than 195% greater compared to pristine ZnO nanowires. This solid solution structure demonstrates a better photoactivity enhancement effect than traditional quantum dot sensitization, as well as allowing hydrogen generation.

Sonochemical synthesis of ZnO‐ZnS core‐shell nanorods for enhanced photoelectrochemical water oxidation

“…ZnO nanorods have been synthesized by various techniques, including wet chemistry, sonochemistry, chemical vapor deposition, molecular beam epitaxy, sputtering, and electrospinning . In order to investigate the electrochemical properties of ZnO nanorods, they must first be grown on a conductive substrate to enable efficient interactions, and for that purpose they are typically controlled with reaction condition . Furthermore, to reduce the contact resistance between the semiconductor (ZnO) and the conductive substrate, the annealing processes are required.…”

“…6,7 In order to investigate the electrochemical properties of ZnO nanorods, they must first be grown on a conductive substrate to enable efficient interactions, and for that purpose they are typically controlled with reaction condition. [8][9][10] Furthermore, to reduce the contact resistance between the semiconductor (ZnO) and the conductive substrate, the annealing processes are required. Accordingly, the facile synthetic method on the conductive substrate is still demanding to reduce fabrication complexity of the devices.…”

Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3layer

“…10 Furthermore, the formation of a passivation layer on all of the research on m-textured BS surface is based on upright pyramids. 30 After the 4 metal-catalyzed-etching process, the formed SiNWs provide an index-graded 5 anti-reflection buffer between silicon and air. In 2 this work, a micro-scale inverted pyramid-based SiNW BS surface is prepared.…”

Effect of thermal annealing on dual photoluminescence emission characteristics of chemically synthesized uncapped Mn2+ doped ZnS quantum dots

“…For 400 1C annealed sample, a broad absorption region covering the entire UV-vis range with maximum absorption at 368 nm for both ZnS and ZnS:Mn QDs has been observed. When the QDs are annealed in air, diffusion of O atoms takes place in ZnS reduces the effective band gap thereby increasing the absorption in the visible region [29]. The diffused O atoms starts occupying the crystal lattice positions by replacing the S atoms and may form native defects which are different from the defects present in ZnS, thereby the PL emission intensity is reduced as compared to that of 200 1C annealed sample.…”

“…The diffused O atoms starts occupying the crystal lattice positions by replacing the S atoms and may form native defects which are different from the defects present in ZnS, thereby the PL emission intensity is reduced as compared to that of 200 1C annealed sample. Further, as the lattice parameter of WZ ZnO (a¼ b¼3.25 Å, c¼5.21 Å) is lower than that of WZ ZnS (a¼ b¼3.80 Å, c ¼6.23 Å) the induced lattice-mismatch strain due to lattice contraction combined with the O induced defects may affect significantly the dielectric response and the band offset of the composite effectively reduces promoting the visible light absorption [25,29]. However, visible light absorption in ZnS-ZnO heterostructure has also been reported by other researchers [30].…”