A New Approach of Polycrystalline Silicon Film on Plastic Substrate Prepared by Ion Beam Deposition Followed by Excimer Laser Crystallization at Room Temperature

Abstract

In this work, we propose a new polycrystalline silicon (poly-Si) film of large grain for thin film transistor on flexible substrate. Thin films of amorphous silicon were deposited on plastic substrate by using ion beam deposition (IBD) and crystallized by excimer laser annealing. The entire process was carried out at room temperature. Si film formed by IBD has much lower impurity such as Ar, O, and H than that deposited by conventional sputtering method. This high purity of Si film makes large grain size (0.5 mm) and shows high endurance of excimer laser energy both on quartz and plastic substrate for flexible active matrix organic light emitting diode (AMOLED).

Polysilicon thin-film transistors on polymer substrates

“…Different techniques able to provide a-Si precursor with reduced H-content have been also proposed, including ionbeam deposition, which contained no hydrogen but a 0.2 at% of Ar [38], catalytic CVD, which provided a-Si precursor containing 1.5 at% of H, a low enough concentration to allow direct excimer laser annealing [39] or inductively coupled plasma (ICP) CVD, which allowed to obtain a-Si precursor containing 3.8 at% of H [40]. However, the use of a-Si:H precursor deposited by PECVD remains the most attractive solution, being a well-established technology with mass production equipment available.…”

Evaluation of Thin-Film Photodiodes and Development of Thin-Film Phototransistor

“…We will propose an artificial retina using the p/i/n TFPTs and LTPS-TFTs, which is expected to be suitable for human bodies because it can potentially be fabricated on a plastic substrate. [21][22][23][24] The circuit configurations, planar photographs, and measured characteristics of the retina pixel and retina array are shown in Fig. 5.…”

Physical Model for Current–Voltage Characteristics of Thin-Film Transistors

“…[11][12][13] This is because they have a high performance comparable to conventional metal-oxide-silicon field-effect transistors (MOSFETs) 14) and flexibility of structures and substrates. [15][16][17][18] To research, develop, and design electronic devices such as MOSFETs, silicon-on-insulators (SOIs), and TFTs, a physical model is useful. In the case of MOSFETs, the channel region is a doped semiconductor and is connected to the wafer terminal.…”