A new analytical model of high voltage silicon on insulator (SOI) thin film devices

Abstract

A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.

Comparative study on the degradation of phenol by a high-voltage pulsed discharge above a liquid surface and under a liquid surface

“…Wang et al [13] used a needle-plate reactor discharge to treat acid orange wastewater and showed that the degradation efficiency enhanced with increasing peak voltage and discharge frequency. Dong et al [14] used a multineedle-plate discharge reactor to treat formaldehyde and optimized the reactor to achieve an optimum degradation efficiency. Sun et al [15] used a gas-phase multi-needle-plate discharge system to degrade the organic pollutant methyl orange.…”

Ultralow specific ON-resistance high-k LDMOS with vertical field plate

“…Power MOS devices have many advantages, such as high input impedance, positive temperature coefficient of onresistance, high switching frequency and wide safe working area. However, an important question with regard to LD-MOS is the disadvantage of "silicon limit" R on,sp ∝ BV 2.5 , which exists between specific on-resistance and breakdown voltage [1][2][3] . In order to break the "silicon limit", domestic and foreign scholars have proposed super-junction structure, high-k technology, and field plate technology to reduce the on-resistance and retain a high blocking voltage [4][5][6] .…”