A new analytical compact model for two-dimensional finger photodiodes

Naeve, T.; Hohenbild, M.; Seegebrecht, P.

doi:10.1016/j.sse.2007.09.008

Cited by 3 publications

(1 citation statement)

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“…The results are compared to an approximated one-dimensional classical approach confirming that a two-dimensional model is needed. The continuity equation for generated carriers within a two-dimensional structure was also solved in [39] to develop an analytical model for finger p-NBL(N-Buried-Layer)-p well -n + photodiodes. Simplifying assumptions were introduced for each of the device regions as, for instance, the no y-dependence in the N-Buried-Layer and P-substrate.…”

Section: B 2d Modelsmentioning

confidence: 99%

A Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse

Blanco-Filgueira

López

Roldán

2016

IEEE Trans. Electron Devices

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CMOS photodiodes are the primary photosensing devices used in nowadays solid-state image sensors. A review of significative CMOS photodiodes models that can be found in the literature of the last years is presented here. We have focused on photodiodes current models in one, two and three dimensions, and we have paid special attention to lateral current components. Lateral collection, particularly for small photodiodes fabricated in deep submicron technologies, has been shown to be of utmost importance. Finally, several models to account for crosstalk effects are also described.

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Section: B 2d Modelsmentioning

confidence: 99%