A Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse

Blanco-Filgueira, B.; López, P.; Roldán, Juan B.

doi:10.1109/ted.2015.2446204

Cited by 13 publications

(4 citation statements)

References 64 publications

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“…A DVANCES in small, low-power CMOS image sensors and related optics have revolutionized consumer photography [1], [2], [3], [4], [5]. These technologies have improved dramatically the spatial resolution, dynamic range, and low light sensitivity of digital photography.…”

Section: Introductionmentioning

confidence: 99%

Learning the Image Processing Pipeline

Jiang

Tian

Farrell

et al. 2017

IEEE Trans. on Image Process.

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Many creative ideas are being proposed for image sensor designs, and these may be useful in applications ranging from consumer photography to computer vision. To understand and evaluate each new design, we must create a corresponding image processing pipeline that transforms the sensor data into a form, that is appropriate for the application. The need to design and optimize these pipelines is time-consuming and costly. We explain a method that combines machine learning and image systems simulation that automates the pipeline design. The approach is based on a new way of thinking of the image processing pipeline as a large collection of local linear filters. We illustrate how the method has been used to design pipelines for novel sensor architectures in consumer photography applications.

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Section: Introductionmentioning

confidence: 99%

Learning the Image Processing Pipeline

Jiang

Tian

Farrell

et al. 2017

IEEE Trans. on Image Process.

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“…These Q-V models of PPD capacitances are also reported. [21][22][23][24] In the measurement setup, electrical injection of charges instead of optical integration is adopted to prevent measurement variations due to light. The drain voltage of reset transistor (VDD − RST) is externally controllable and the source of reset transistor is connected to the FD node.…”

Section: Photoeectric Modelmentioning

confidence: 99%

“…Additionally, there is no compact model that combines key parameters to reflect the entire operation process of PPD. [23] Furthermore, the above-mentioned models cannot be integrated into the SPICE framework. Thus, it is hard to effectively evaluate the compatibility between devices and system indicators.…”

Section: Introductionmentioning

confidence: 99%

MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation

Zhang¹,

Hu²,

YouzeXin³

et al. 2022

Chinese Phys. B

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By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer, and storage in the four-transistor active pixel sensor (4T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes (PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates (TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion (FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.

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“…Recently, with the increasing demand for smaller pixel pitches for a denser array, inter-pixel crosstalk has been extensively characterized on the different material systems. [7][8][9][10][11][12][13][14] Here, inter-pixel crosstalk has been improved with an epitaxial layer modification in the depleted passivation structure while preserving the dark current suppression ability of this structure. Both depleted passivation and modified depleted passivation structures are numerically compared by an experimental-like crosstalk measurement technique to emphasize the crosstalk improvement.…”

Section: Introductionmentioning

confidence: 99%