A New 5–13 GHz Slow-Wave SPDT Switch With Reverse-Saturated SiGe HBTs

Davulcu, Murat; Ozeren, Emre; Kaynak, Mehmet; Gürbüz, Yaşar

doi:10.1109/lmwc.2017.2701328

Cited by 7 publications

(8 citation statements)

References 7 publications

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“…Among the SPDT switch designs compared in Table 1, only two works implemented the SPDT switch using a normal CMOS process which is the SPDT switch proposed in this paper and the structure presented in [20]. Compared to [20], the insertion loss of the proposed SPDT switch is slightly higher but the isolation characteristic is significantly better compared to the approach presented in [19]. The SPDT switch proposed in this paper has better performance and a smaller size while it only requires normal CMOS process to implement the circuit.…”

Section: Resultsmentioning

confidence: 99%

“…The approach presented in [19] is proposed for the on-chip level. The SPDT switch presented in this article is implemented using silicon-germanium (SiGe) BiCMOS process technology.…”

Section: Introductionmentioning

confidence: 99%

“…The SPDT switch presented in this article is implemented using silicon-germanium (SiGe) BiCMOS process technology. The shunt-shunt topology is used in the structure of the SPDT switch in [19]. The performance of this SPDT switch is obtained based on the layout optimization and highly depends on the process' performance itself.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

40 dB-Isolation, 1.85 dB-Insertion Loss Full CMOS SPDT Switch with Body-Floating Technique and Ultra-Small Active Matching Network Using On-Chip Solenoid Inductor for BLE Applications

et al. 2018

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In the IoT/wearable devices, the antenna is shared with the receiver and transmitter of the transceiver. This requires the control of the switch between the antenna and the control circuitry to achieve both low insertion loss and high isolation. This paper presents a low insertion loss and high isolation switch based on Single Pole Double Throw (SPDT) switch for 2.4 GHz Bluetooth low power (BLE) transceiver. The body-floating technique is used to improve the insertion loss’s performance. An ultra-small on-chip matching network with high Q-factor is proposed. The shunt transistors are used as active shunt capacitors that create the active matching network to improve isolation characteristics. The proposed SDPT switch was designed using 55 nm CMOS process with the total area of 110 μm × 210 μm. The insertion loss and isolation characteristics of the proposed SPDT switch observed at 2.4 GHz are 1.85 dB and 40 dB, respectively.

show abstract

Section: Resultsmentioning

confidence: 99%

“…The approach presented in [19] is proposed for the on-chip level. The SPDT switch presented in this article is implemented using silicon-germanium (SiGe) BiCMOS process technology.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

40 dB-Isolation, 1.85 dB-Insertion Loss Full CMOS SPDT Switch with Body-Floating Technique and Ultra-Small Active Matching Network Using On-Chip Solenoid Inductor for BLE Applications

et al. 2018

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“…Moreover, when the Q p devices are routed in RS configuration, since the emitter has a considerably smaller (1.9 fF) shunt capacitor than the collector (24.5 fF) due to its better physical isolation from the substrate [10], RS HBT configuration leads a much lower total shunt capacitor on the signal path. Furthermore, it is verified in [12] that, RS method boosts the power handling capability of the HBTs due to the higher doping concentration of the emitter and graded doping profile of the base of the HBTs. The reason behind this behavior, the junction between base and emitter at high RF power creates a lower loss path toward the ground than the junction between base and collector.…”

Section: Reverse-saturation Methodsmentioning

confidence: 93%

A 7-Bit Reverse-Saturated SiGe HBT Discrete Gain Step Attenuator

Davulcu

Burak

Gürbüz

2020

IEEE Trans. Circuits Syst. II

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In this study, the analysis, design and measured results of a fully integrated 7-Bit step attenuator implemented in a 0.25-µm Silicon-Germanium (SiGe) BiCMOS process technology, are described. The attenuator is designed based on delicately ordered and cascaded Π/T type attenuation blocks, which are comprised of series/shunt switches employing SiGe hetero-junction bipolar transistors (HBTs) with peak fT /fmax of 110/180 GHz. HBTs are employed as a series switch to decrease the insertion-loss of the attenuator. Moreover, to authors' best knowledge, this is the first study presenting the effect of employing reverse-saturated HBTs as a shunt switch for each attenuation blocks. Thanks to this advancement, the highest input-referred 1-dB compression point (IP 1dB ) is reported for Si-based similar studies. This method also decreases the insertion-loss of the proposed attenuator. The measurements result in the state-ofthe-art performance with 28.575 dB attenuation range by 0.225 dB gain steps while maintaining 7-bit amplitude resolution across 6.6 GHz to 12.8 GHz frequency band, where RMS phase error remains below 3.3 • and insertion loss (IL) is less than 12.4 dB. The measured IP 1dB of the attenuator is 13.5 dBm while drawing 8 mA from 3.3 V supply. The die occupies an area of 1.37 mm x 0.56 mm excluding pads.

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“…In fact, thanks to the technological leaps achieved by semiconductor foundries in the recent years, SPDTs have been reported up to practically the end of the mm-Wave band (i.e., up to 285 GHz) in silicon-based technologies [5]. In addition, active competition in the literature can be observed between approaches reporting the use of Heterojunction Bipolar Transistors (HBT) [6], [7] and the use of MOSFETs [5], [8]- [11]. However, to the best of authors' knowledge, a thorough analysis of the literature reveals that a clear comparison between MOSFETs and HBTs for the fabrication of mm-Wave SPDTs in the same technology node has never been reported.…”

Section: Introductionmentioning

confidence: 99%

mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs

Margalef‐Rovira

Gaquière

Souza

et al. 2021

2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)

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This paper aims to compare the performance of HBT-based and MOSFET-based mm-Wave SPDT switches in a single BiCMOS technology. To the best of authors' knowledge, a direct comparison of this function in the same integrated process has never been reported before. Measurement results on two 50-GHz integrated SPDTs reveal that the HBT-based SPDT switch yields 1.7 dB of insertion loss and 14 dB of isolation in its central frequency, with a bandwidth covering the 30-80 GHz frequency range when considering a return loss greater than 10 dB. On the other hand, the MOSFET-based SPDT switch yields 2.1 dB of insertion loss and 12 dB of isolation at center frequency and a bandwidth covering the 33-80 GHz frequency range.

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A New 5–13 GHz Slow-Wave SPDT Switch With Reverse-Saturated SiGe HBTs

Cited by 7 publications

References 7 publications

40 dB-Isolation, 1.85 dB-Insertion Loss Full CMOS SPDT Switch with Body-Floating Technique and Ultra-Small Active Matching Network Using On-Chip Solenoid Inductor for BLE Applications

40 dB-Isolation, 1.85 dB-Insertion Loss Full CMOS SPDT Switch with Body-Floating Technique and Ultra-Small Active Matching Network Using On-Chip Solenoid Inductor for BLE Applications

A 7-Bit Reverse-Saturated SiGe HBT Discrete Gain Step Attenuator

mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs

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