A new 1.47 eV defect-luminescence band in MOCVD-grown CdTe on (100) GaAs

Photoluminescence studies of CdTe films and junctions

“…1), and (b) a second new band with maximum intensity at 1.465 eV. The latter has been previously assigned to a radiative annihilation of excitons bound to structural defects [6]. Corwine et al have correlated this band to the presence of oxygen in CdTe [7].…”

Gamma-radiation effect on donor and acceptor states in CdTe and CdTe:Cl

“…The intensity of this band quickly decreases for D ≤ 10 kGy and remains almost constant at larger doses. Beside the DAP band, another PL line at 1.477 eV, so-called Y-line, is often observed in the PL spectra and it was assigned to recombination either at extended defects [7,8] or via deep donor states [9]. In any case, the nature of this line differs from the D-A recombination and its influence must be taken into account to properly derive the DAP band parameters.…”

Influence of g-irradiation on photoluminescence spectra of CdTe:Cl

“…However, in this spectral range the DAP recombination with participation of background impurities Cu, Ag, Au can be also detected [8]. Analysis of the 1.35-1.50 eV emission is complicated for the possible coexistence and superposition in this spectral region of PL bands having different nature [8,[17][18][19]. Therefore, a great inaccuracy may arise when determining the parameters of this band, for example the Huang-Rhys factor value which characterizes electron-phonon coupling.…”