A Network Analogue Method for Computing the TEM Characteristics of Planar Transmission Lines

Lennartsson, Bengt

doi:10.1109/tmtt.1972.1127818

Cited by 23 publications

(5 citation statements)

References 7 publications

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“…4) New techniques have been developed that make wideband phase shifters easy to realize (multilayer technique is not needed). 5) A simple technique has been developed that extends the practically usable frequency range of the phase shifters to at least 18 GHz.…”

Section: Attenuator Princ Iplementioning

confidence: 99%

Wideband Planar Transmission Line Pin-Diode Attenuator/Modulator

Rehnmark

1975

1975 5th European Microwave Conference

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A new principle for wideband attenuators is presented: The attenuator consists of power dividers, 90-degree phase shifters, and PIN-diodes.The power reflected at the diodes is absorbed by th& isolatiorn resistors of one of the power dividers.A new technique for phase shifters is presented: Allpass meander line networks of low order havebeen developed and used irnstead of conventional phase shifters. Equivalent circuits with well known properties have made it straight-forward to calculate the allpass co-nditions. Multilayer technique has been avoided by the use of meander lines, Experimental verification: An experimental stripline device covering 2-7.2 GHz with a VSWR of less than 1.85 is shown. Another device, also in stripline, covers 6-18 GHz with a VSWR of less than 2.15.The results are in good agreement with the theory presented.

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Section: Attenuator Princ Iplementioning

confidence: 99%

Wideband Planar Transmission Line Pin-Diode Attenuator/Modulator

Rehnmark

1975

1975 5th European Microwave Conference

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“…The finite element method [4] and the finite difference method [5] involve determination of the charge distributions on the conductor surfaces and can be applied to several conductor geometries. The network analogue method, evolved from the finite difference representation of partial differential equations [6], has been used for finite substrates in two dimensions [7], open substrates in three dimensions [8,9] as well as for lossy, anisotropic and layered structures [10][11][12][13][14]. In the past, capacitance models have been developed for integrated circuit metallization wires [15] and the system of equations for infinite printed conductors has been solved [16].…”

Section: Introductionmentioning

confidence: 99%

Parasitic Capacitances and Inductances for Multilevel Interconnections on GaAs-Based Integrated Circuits

Goel

Huang

1991

Journal of Electromagnetic Waves and Applications

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A computer-efficient algorithm to determine the parasitic capacitances and inductances associated with high-density multilevel interconnections on GaAs-based integrated circuits is presented. The self and coupling interconnection capacitances have been determined by an efficient and more flexible network analogue method developed for the finite dimension interconnection configurations as well as by the method of moments in conjunction with a Green's function appropriate for the geometry of the interconnection lines. The Green's function was obtained by using the method of multiple images. The results include the fringing fields as well as the shielding by the neighboring interconnections. For a given set of the interconnection dimensions, the algorithm takes less than 30 seconds of computer processing time on a mainframe computer equipped with a math co-processor. The algorithm has been used to study the dependences of the interconnection capacitances and inductances on the interconnection parameters such as their length, width, interlevel distances, separation and the substrate thickness for a system of parallel single-, bi-, and tri-level interconnections printed on or embedded in the GaAs substrate.

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“…Since only potentials and charges on the metallic strips are needed for computing the capacitance matrix, it becomes obviously desirable to use reduced matrices that correspond to the metallic strip regions 20,5. Hence, the following equation can be derived:[⌽ → ] red = [⌫] red [q…”

mentioning

confidence: 99%

QUASI-STATIC MoL-BASED APPROACH FOR THE ANALYSIS OF MULTILAYER TRANSMISSION LINE STRUCTURES

Zitouni

Bourdoucen

Djoudi

1997

Int. J. Numer. Model.

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In this paper, a generalized approach for the analysis of multistrip multidielectric layer transmission line structures based on the Method of Lines (MoL) is presented. The proposed algorithm is not limited either by the number of dielectric layers or by the number of metallic strips that can be positioned at different interfaces. The program we have written has been successfully tested on various structures and the obtained results are compared with those published by other authors. © 1997 John Wiley & Sons, Ltd.

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A Network Analogue Method for Computing the TEM Characteristics of Planar Transmission Lines

Cited by 23 publications

References 7 publications

Wideband Planar Transmission Line Pin-Diode Attenuator/Modulator

Wideband Planar Transmission Line Pin-Diode Attenuator/Modulator

Parasitic Capacitances and Inductances for Multilevel Interconnections on GaAs-Based Integrated Circuits

QUASI-STATIC MoL-BASED APPROACH FOR THE ANALYSIS OF MULTILAYER TRANSMISSION LINE STRUCTURES

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