Abstract:To estimate characteristic fluctuation of emerging devices, three-dimensional device simulation has been performed intensively for various random cases; however, it strongly relies on huge computational resource. In this paper, we report a nanosized-metal-grain pattern-dependent model by using the method of multi-variable non-linear regression (MVNLR) for the threshold voltage fluctuation (Vth) of gate-all-around silicon nanowire metal-oxide-semiconductor field-effect transistors. The model is developed by pe… Show more
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