A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs

Azarifar, Mohammad; Dönmezer, Nazlı

doi:10.1016/j.microrel.2017.05.020

Cited by 11 publications

(4 citation statements)

References 25 publications

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“…Due to the intrinsic nature of GaN HEMTs, harsh and localized self-heating in the conducting channel may occur [26]; this effect increases with the device power density and further compromises reliability [22,27]. On one side, the electrical behavior of the traps mentioned in the above paragraph is temperature-dependent [25].…”

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confidence: 99%

Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

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Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high electron mobility transistors, the relatively low thermal conductivity of the material induces the appearance of localized hotspots that degrade the devices performance and compromise their long term reliability. On the search of effective thermal management solutions, the integration of GaN and synthetic diamond with high thermal conductivity and electric breakdown strength shows a tremendous potential. A significant effort has been made in the past few years by both academic and industrial players in the search of a technological process that allows the integration of both materials and the fabrication of high performance and high reliability hybrid devices. Different approaches have been proposed, such as the development of diamond/GaN wafers for further device fabrication or the capping of passivated GaN devices with diamond films. This paper describes in detail the potential and technical challenges of each approach and presents and discusses their advantages and disadvantages.

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confidence: 99%

Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

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“…Various design improvements have been developed in recent years to overcome the limitations of these heterojunction-based HEMTs as biosensors in order to achieve their optimum potential. These structural design improvements and advancements were thoroughly investigated to determine which could provide better stability and sensitivity to the biosensor [ 29 , 30 , 31 ].…”

Section: Introductionmentioning

confidence: 99%

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors

et al. 2023

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High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields.

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“…Typically, a standard package is used to dissipate the generated heat, and to protect the active region and miniature bonding wires. Resultant thermal resistance from the active region towards package, and then towards any extended surfaces to the ambient, determines the T j [20,21]. In an interrelated manner, T j alters the temperature-dependent radiative and non-radiative recombinations of SSL devices, as well as carrier leakage from active regions in some instances [22], which all can be summarized as thermal droop.…”

Section: Introductionmentioning

confidence: 99%

Dynamic opto-electro-thermal characterization of solid state lighting devices: measuring the power conversion efficiency at high current densities

Azarifar¹,

Cengiz²,

Arık³

2022

J. Phys. D: Appl. Phys.

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Solid state lighting devices with high power densities require accurate characterization, as the rise of chip temperature impacts its optical, electrical, and lifetime characteristics. A detailed experimental study is performed in order to analyze opto-electro-thermal behavior as new high-power devices like laser diodes are becoming of interest. The outline of this article was inspired by two major issues identified in previous experimental approaches. First, there is some debate in the literature about the linearity of the temperature coefficient of the forward voltage. Second, there is a limited number of experimental reports on the temperature dependence of power conversion efficiency. We have shown that prior variations are the result of a diversity in the selection of electrical parameters during thermal calibrations, as both linear and non-linear relationships for temperature coefficient of voltage can be obtained. On the other hand, it was discovered that report scarcity for temperature-dependent studies can be related to the use of passive approaches for temperature-dependent measurements. In temperature-controlled environments, short pulses with high current densities may not ensure the thermal equilibrium of the device under test due to small thermal capacitance. This issue, as well as the lengthy process of passive measurements can be addressed by implementing a dynamic measurement method presented in this study. Finally, linear power conversion efficiency trends with junction temperature are demonstrated for both blue LEDs and LDs at high current densities.

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A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs

Cited by 11 publications

References 25 publications

Diamond/GaN HEMTs: Where from and Where to?

Diamond/GaN HEMTs: Where from and Where to?

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors

Dynamic opto-electro-thermal characterization of solid state lighting devices: measuring the power conversion efficiency at high current densities

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