Abstract:A new multidomain pseudospectral frequency-domain (PSFD) method based on Legendre polynomials with a penalty scheme for studying electromagnetic wave scattering is presented. Scattered field calculation with accuracy on the order of 9 10 is obtained for a circular plasmonic cylinder. The method is further applied to demonstrate the scattering by a dielectric rectangular cylinder with sharp corners and by multiple circular plasmonic cylinders.
“…For a simple circuit simulation, an extraction of equivalent circuit is indispensable, because full-wave EM simulation requires a lot of simulation time. [26][27][28][29][30][31][32][33][34] Especially, full-wave EM simulation in multi-layer metal structure such as PPGM makes the design process very complicated. To solve this problem, RLC equivalent circuit [35][36][37][38][39][40][41][42] should be extracted.…”
Section: Equivalent Circuitmentioning
confidence: 99%
“…In spite of the an error range of 8.8-10.1%, the equivalent circuit proposed in this paper is the most efficient method to analyze the PPGM structure, because there is no equivalent circuit of PPGM in the commercial Advanced Design System (ADS) tool due to its very complicated structure of PPGM and three-dimensional (3D) full-wave analysis requires a lot of simulation time. [26][27][28][29][30][31][32][33][34]…”
In this work, basic characteristics of transmission line employing periodically perforated ground metal (PPGM) were investigated using theoretical and experimental analysis. Concretely, bandwidth and impedance were investigated using theoretical analysis, and wavelength and effective permittivity were extracted from experimental results. In addition, insertion loss and isolation characteristics were investigated using equivalent circuit analysis. For simplification of design process, equivalent circuits for the PPGM cell were extracted, and all circuit parameters were expressed by closed-form equation. Above results indicate that the transmission line employing PPGM is a promising candidate for a development of matching and passive elements on monolithic microwave integrated circuit (MMIC) including wireless communication circuit and compound semiconducting devices such as high electron mobility transistor (HEMT), diamond field effect transistor (FET) and light emitting diode (LED).
“…For a simple circuit simulation, an extraction of equivalent circuit is indispensable, because full-wave EM simulation requires a lot of simulation time. [26][27][28][29][30][31][32][33][34] Especially, full-wave EM simulation in multi-layer metal structure such as PPGM makes the design process very complicated. To solve this problem, RLC equivalent circuit [35][36][37][38][39][40][41][42] should be extracted.…”
Section: Equivalent Circuitmentioning
confidence: 99%
“…In spite of the an error range of 8.8-10.1%, the equivalent circuit proposed in this paper is the most efficient method to analyze the PPGM structure, because there is no equivalent circuit of PPGM in the commercial Advanced Design System (ADS) tool due to its very complicated structure of PPGM and three-dimensional (3D) full-wave analysis requires a lot of simulation time. [26][27][28][29][30][31][32][33][34]…”
In this work, basic characteristics of transmission line employing periodically perforated ground metal (PPGM) were investigated using theoretical and experimental analysis. Concretely, bandwidth and impedance were investigated using theoretical analysis, and wavelength and effective permittivity were extracted from experimental results. In addition, insertion loss and isolation characteristics were investigated using equivalent circuit analysis. For simplification of design process, equivalent circuits for the PPGM cell were extracted, and all circuit parameters were expressed by closed-form equation. Above results indicate that the transmission line employing PPGM is a promising candidate for a development of matching and passive elements on monolithic microwave integrated circuit (MMIC) including wireless communication circuit and compound semiconducting devices such as high electron mobility transistor (HEMT), diamond field effect transistor (FET) and light emitting diode (LED).
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