2017 International SoC Design Conference (ISOCC) 2017
DOI: 10.1109/isocc.2017.8368814
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A multiband fully integrated high-linearity power amplifier using a 0.18-μm CMOS process for LTE applications

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“…Meanwhile, utilizing the CG feedback body biasing (FBB) technique at the input transistor leads to a further decrease in the supply of power (Vdd) due to a decrease in the threshold voltage resulting from a decrease in the use of power consumption for 3.1 -10.6 GHz frequency wideband matching [11]. According to Wu & Yang [12], the feedback technique proposed utilized improvement in the bandwidth and employed compensation on gain and become a major factor to surpass the crucial problem of stability and gain flatness besides capable of solving problem low breakdown voltage and achieve high power performance.…”
Section: Low Noise Amplifier Reviewmentioning
confidence: 99%
“…Meanwhile, utilizing the CG feedback body biasing (FBB) technique at the input transistor leads to a further decrease in the supply of power (Vdd) due to a decrease in the threshold voltage resulting from a decrease in the use of power consumption for 3.1 -10.6 GHz frequency wideband matching [11]. According to Wu & Yang [12], the feedback technique proposed utilized improvement in the bandwidth and employed compensation on gain and become a major factor to surpass the crucial problem of stability and gain flatness besides capable of solving problem low breakdown voltage and achieve high power performance.…”
Section: Low Noise Amplifier Reviewmentioning
confidence: 99%