A multi-gbit/sec electron-beam-semiconductor signal processor

Bahraman, A.; Curtis, O. L.; Crandall, Walter E.

doi:10.1109/iedm.1974.6219651

Cited by 1 publication

(3 citation statements)

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“…The diode was designed for minimum risetime at the rated output signal of 5V (2,3). The output voltage is given by…”

Section: Target Designmentioning

confidence: 99%

“…The polycrystalline silicon layer is used as a beam shield in order to prevent electron-beam-induced target failure (2). Some problems were encountered in the fabrication of the target.…”

Section: Target Designmentioning

confidence: 99%

“…The former has been described previously (2) and is reviewed very briefly with the improved performance specifications achieved recently . The multiple -gun device is found to offer some advantages over the single-gun design and is discussed in detail.…”

Section: Introductionmentioning

confidence: 97%

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Multi-gigabit/s digital multiplexing with EBS devices

Bahraman

1976

1976 International Electron Devices Meeting

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Two design approaches are presented to an EBS signal processor that multiplexes multiple input data lines into a single output (parallel-to-serial conversion) with 2 Gbit/s serial output data rate. The first approach uses a CRT-type electron gun, eight input gates, and one silicon diode target. The second approach uses multiple electron sources, multiple input gates, and a single silicon diode target. A gating system is used to present to the t a rget a 0.5-ns aperture time per electron gun. This approach is much less sensitive to misalignment and power supply and R F input drive instabilities than the fir st approach. In addition, higher output signal amplitudes and a smaller tube were achieved. Output pulse characteristics demonstrated at the 2 Gbit/s data rate are 5 t o 7V pulse amplitude into 50n and less than 0.25 ns pulse risetime.

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“…The diode was designed for minimum risetime at the rated output signal of 5V (2,3). The output voltage is given by…”

Section: Target Designmentioning

confidence: 99%

“…The polycrystalline silicon layer is used as a beam shield in order to prevent electron-beam-induced target failure (2). Some problems were encountered in the fabrication of the target.…”

Section: Target Designmentioning

confidence: 99%