A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

Tsatsulnikov, A. F.; Lundin, W. V.; Sakharov, A. V.; Заварин, Е. Е.; Usov, S. O.; Николаев, А. Е.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Закгейм, А. Л.; Мизеров, М. Н.

doi:10.1134/s1063782610060205

Cited by 13 publications

(7 citation statements)

References 5 publications

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“…The best CRI for such devices reported is 41 [16]. White light emission from all electrically pumped QWs with CCT∼6000 K has been reported previously [19].…”

Section: Introductionmentioning

confidence: 61%

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

Yadav

Titkov²,

Sakharov

et al. 2018

Applied Sciences

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Abstract:We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm 2 to 12.9 A/cm 2 . It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

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“…The best CRI for such devices reported is 41 [16]. White light emission from all electrically pumped QWs with CCT∼6000 K has been reported previously [19].…”

Section: Introductionmentioning

confidence: 61%

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

Yadav

Titkov²,

Sakharov

et al. 2018

Applied Sciences

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“…Details of this mechanism are not entirely clear now. This approach allows to reach external efficiencies of (8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)% in the (560-530) nm range (Fig. 4).…”

Section: Resultsmentioning

confidence: 97%

InGaN/GaN short‐period superlattices: synthesis, properties, applications

Tsatsulnikov

Lundin

Сахаров

et al. 2011

Phys. Status Solidi C

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InGaN/GaN short‐period superlattices were fabricated using method based on cycle conversion of surface InGaN layer to GaN by applying of growth interruptions in hydrogen atmosphere. SPSLs having total thickness from 12 nm to 120 nm were grown and investigated by combination of optical methods, XRD and high resolution transmission electron microscopy (HRTEM) with geometric phase analysis. Blue, deep green (540‐560 nm) and monolithic white LEDs (containing in active region green and blue InGaN QWs separated by the SPSL or GaN barrier) were grown and investigated. Deep green LEDs have maximal external quantum efficiency of 8‐16% in the range of 560‐540 nm correspondingly. Monolithic white LED structures with CCT in the range of 5000‐6000 K have maximal external quantum efficiency of more than 6%. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…10,11 From the first noted monolithic white LEDs 10 they are being developed for over 10 years. [10][11][12][13][14][15][16] Nevertheless, the EQE, colour rendering index (CRI) and CCT at sufficient luminous flux still need improvements. 12,16 The main problem is that the IQE is low for yellow-green emitting InGaN QWs.…”

Section: Introductionmentioning

confidence: 99%

“…New approach to monolithic white LED was recently suggested 14,15,16 . The authors first used short-period superlattice (SPSL) to improve free carriers injection between blue and green QWs, but maximal EQE was less than 7%.…”

Section: Introductionmentioning

confidence: 99%

“…The authors first used short-period superlattice (SPSL) to improve free carriers injection between blue and green QWs, but maximal EQE was less than 7%. The paper 14 claimed there are two reasons for the poor efficiency of the monolithic white LEDs: the low internal quantum efficiency and non-uniform carrier injection into various QWs. Nevertheless, direct investigation of IQE or injection efficiencies (IE) in such structures has never been reported before.…”

Section: Introductionmentioning

confidence: 99%

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Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

et al. 2014

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Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

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A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

Cited by 13 publications

References 5 publications

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

InGaN/GaN short‐period superlattices: synthesis, properties, applications

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

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