A monolithic phased array using 3-bit DMTL RF MEMS phase shifters

Topallı, Kağan; Ünlü, Mehmet; Çivi, Özlem Aydın; Demır, Şımşek; Koc, Sencer; Akın, Tayfun

doi:10.1109/aps.2006.1710573

Cited by 17 publications

(9 citation statements)

References 4 publications

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“…The proposed circuit model is verified on the switches that are fabricated using the in-house surface micromachining RF MEMS process on a 500-µm thick glass substrate [14]. Fig.…”

Section: Measurement Resultsmentioning

confidence: 99%

“…Among the RF MEMS components, RF MEMS switches [2][3][4][5][6], which show substantially higher performance than semiconductor based counterparts, have an important role for RF MEMS technology, since they are used as a part of many other components, such as phase shifters, impedance tuners, filters, and reconfigurable antennas [7][8][9][10][11][12][13][14]. One of the most important performance criteria of a MEMS switch is the level and bandwidth of its isolation.…”

Section: Introductionmentioning

confidence: 99%

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Empirical Formulation of Bridge Inductance in Inductively Tuned Rf Mems Shunt Switches

Topallı¹,

Ünlü²,

Atasoy³

et al. 2009

PIER

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Abstract-This paper presents a substrate independent empirical formulation for the bridge inductance of inductively tuned RF MEMS shunt switches, allowing a systematic design approach to tune their isolation bands. Inductive tuning of RF MEMS switches is achieved by inserting recesses in the ground plane and meanders to the bridges, allowing the tuning of the isolation band of the switch from the X-band to the mm-wave band. The bridge inductance is first extracted from parametric EM simulations of the RF MEMS shunt switches and then fitted to the proposed formulations using empirical coefficients. The accuracy of the formulations is verified with the measurements on the switches that are fabricated using an in-house surface micromachining RF MEMS process on a 500-µm thick glass substrate. Measurement results verify that the bridge inductances can be determined by the provided empirical formulation.

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“…The proposed circuit model is verified on the switches that are fabricated using the in-house surface micromachining RF MEMS process on a 500-µm thick glass substrate [14]. Fig.…”

Section: Measurement Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Empirical Formulation of Bridge Inductance in Inductively Tuned Rf Mems Shunt Switches

Topallı¹,

Ünlü²,

Atasoy³

et al. 2009

PIER

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“…There can be n improvement of 6-8 dB in the insertion loss of RADAR system by utilizing MEMS technology. For this, even one of the amplifier stages can be removed, reducing both DC power consumption and production cost of the system [7].…”

Section: Phase Shiftermentioning

confidence: 99%

“…Usually, till date, antenna elements, phase shifter component and feed network are designed and manufactured separately on different substrates and then integrated finally with hybrid connections. It not only increases the circuit size and packaging costs but also invites parasitic effects and extra losses associated at higher frequencies [6] [7].…”

Section: Introductionmentioning

confidence: 99%

MEMS based monolithic Phased array using 3-bit Switched-line Phase Shifter

Karmakr

Roy

Bhattacharjee

2017

AEM

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This article details the design of an electronically scanning phased array antenna with proposed fabrication process steps. Structure is based upon RF micro-electromechanical system (MEMS) technology. Capacitive type shunt switches have been implemented here to cater high frequency operation. The architecture, which is deigned at 30 GHz, consists of 3-bit (11.25º, 22.5º & 45º) integrated Switched-line phase shifter and a linearly polarized microstrip patch antenna. Detailed design tricks of the K aband phase shifter is outlined here. The whole design is targeted for future monolithic integration. So, the substrate of choice is High Resistive Silicon (ρ > 8kΩ-cm, tan δ =0.01 and ϵ r =11.8). The overall circuit occupies an crosssectional area of 20 × 5 mm 2 . The simulated results show that the phase shifter can provide nearly 11.25º/22.5º/45º phase shifts and their combinations at the expense of 1dB average insertion loss at 30 GHz for eight combinations. Practical fabrication process flow using surface micromachining is proposed here. Critical dimensions of the phased array structure is governed by the deign rules of the standard CMOS/MEMS foundry.

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“…Starting from the just mentioned basic lumped components, it is possible to synthesize entire functional sub-blocks for RF applications in MEMS technology. Also in this case, highly significant demonstrators are reported and discussed in literature concerning, for example, tuneable phase shifters (Topalli et al, 2008), switching matrices (Daneshmand & Mansour, 2007), reconfigurable impedance matching networks (Larcher et al, 2009) and power attenuators . In all the just listed cases, the good characteristics of RF-MEMS devices lead, on one side, to very highperformance networks and, on the other hand, to enabling a large reconfigurability of the entire RF/Microwave systems employing MEMS sub-blocks.…”

Section: Introductionmentioning

confidence: 99%

Advanced Microwave Circuits and Systems

Zhurbenko

2010

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A monolithic phased array using 3-bit DMTL RF MEMS phase shifters

Cited by 17 publications

References 4 publications

Empirical Formulation of Bridge Inductance in Inductively Tuned Rf Mems Shunt Switches

Empirical Formulation of Bridge Inductance in Inductively Tuned Rf Mems Shunt Switches

MEMS based monolithic Phased array using 3-bit Switched-line Phase Shifter

Advanced Microwave Circuits and Systems

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