A monolithic lead sulfide-silicon MOS integrated-circuit structure

Jhabvala, M.; Barrett, John R.

doi:10.1109/t-ed.1982.21049

Cited by 6 publications

(2 citation statements)

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“…Although lead salts were the first to be developed, much more attention has recently been paid to HgCdTe, in spite of the difficulties of processing this material. However, highquality detectors have recently been developed with lead chalcogenide materials (mainly PbS), using technologies such as molecular beam epitaxy (MBE) [2][3][4] or chemical deposition [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…For the possible monolithic integration of PbSe photodetectors with the corresponding signal-processing electronics, the growth of such devices on Si substrates would be a desirable option. There are a few references about the integration of lead chalcogenide detectors on Si substrates [2][3][4][5], most of them being concerned with material deposited by MBE or chemical deposition, technologies that nowadays are not fully integrated in the microelectronics industry. ‡ Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

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Arrays of thermally evaporated PbSe infrared photodetectors deposited on Si substrates operating at room temperature

Martín

Hernández

Adell

et al. 1996

Semicond. Sci. Technol.

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Thermally evaporated polycrystalline lead selenide was used to make detector arrays on high-resistivity Si substrates, for use as infrared photodetectors in the 3-5 µm range. The arrays were made using standard photolithographic methods and a process fully compatible with the technologies used in the microelectronics industry. After activation at high temperature in an O 2 + I atmosphere, excellent uniformity and room-temperature peak detectivities up 10 9 cm Hz 1/2 W −1 were obtained. The spectral response at 273 K of the detectors went up to 5 µm, with peak responsivity of 7 × 10 3 V W −1 at 4.1 µm. These arrays have been used to develop compact gas sensors with the addition of integrated bandpass multilayer optical filters.

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