A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier

Ayasli, Y.; Mozzi, R. L.; Vorhaus, J.L.; Reynolds, L.D.; Pucel, R.A.

doi:10.1109/tmtt.1982.1131186

Cited by 208 publications

(23 citation statements)

References 3 publications

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“…Similarly, the attenuation on the output collector line will reduce the power from the first cell to the circuit output. This limits the achievable gain, and since the attenuation increases with frequency, also the bandwidth of a conventional DA [13], [14].…”

Section: Conventional Damentioning

confidence: 99%

InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth

Eriksson

Darwazeh

Zirath

2015

IEEE Trans. Microwave Theory Techn.

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Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed and measured. The amplifiers use different types of distributed amplifier (DA) topologies, all based on cascode gain cells. A single-stage DA design achieves 7.5-dB gain and 192-GHz bandwidth and a two-cascaded single-stage DA achieves an average gain of 16 dB with a bandwidth of 235 GHz. The third circuit is a conventional DA with more than 10-dB gain from 70 kHz up to 180 GHz. To the authors' best knowledge, the single-stage DA and the two-cascaded single-stage DA are the widest band amplifiers in any technology reported to date. Furthermore, the conventional DA has a record bandwidth for circuits in conventional DA topology with gain from near dc.

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Section: Conventional Damentioning

confidence: 99%

InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth

Eriksson

Darwazeh

Zirath

2015

IEEE Trans. Microwave Theory Techn.

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“…Analyses which take into account some of these effects recently appeared in the literature (Ayasli et al 1982, Ku and He 1983, Beyer et al 1984. For circuit analysis and performance optimization without having to make simplifying assumptions, standard optimization programs such as SUPERCOMPACT are very valuable.…”

Section: Discussionmentioning

confidence: 99%

An overview of monolithic GaAs MESFET travelling-wave amplifiers

Ayasli

1985

International Journal of Electronics

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“…Ayasli et al published design formulas for the gain of a TWA based on an approach that approximates gate and drain lines as continuous structures [6]. Similarly, Beyer et al developed a closed-form expression for the gain that depends on the circuits propagation constants and the gate circuit cutoff frequency [7].…”

Section: Topology Of the Twamentioning

confidence: 99%

Behavior of a traveling-wave amplifier versus temperature in SOI technology

Moussa

Pavageau

Simon

et al. 2006

IEEE Trans. Microwave Theory Techn.

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In this paper, the design and measurement results of a CMOS partially depleted silicon-on-insulator (SOI) traveling-wave amplifier (TWA) are presented. The four-stage TWA is designed with a single common source nMOSFET in each stage using a 130-nm SOI CMOS technology requiring a chip area of 0.75 mm 2 . A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4-V supply voltage for a power consumption of 66 mW.The designed circuit has been characterized over a temperature range from 25 C to 300 C. The performance degradation on the gain of the TWA, the SOI transistors, as well as the microstrip lines used for the matching network are analyzed. Thanks to the introduction of a dynamic threshold-voltage MOSFET, a greater gain-bandwidth product under lower bias conditions is demonstrated.Index Terms-Dynamic threshold voltage MOSFET (DTMOS), floating body (FB), high-temperature effect, microstrip lines, silicon-on-insulator (SOI), traveling-wave amplifier (TWA).

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A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier

Cited by 208 publications

References 3 publications

InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth

InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth

An overview of monolithic GaAs MESFET travelling-wave amplifiers

Behavior of a traveling-wave amplifier versus temperature in SOI technology

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