A monolithic GaAs 1 - 13-GHz traveling-wave amplifier

Ayasli, Y.; Mozzi, R. L.; Vorhaus, J.L.; Reynolds, L.D.; Pucel, R.A.

doi:10.1109/t-ed.1982.20836

Cited by 19 publications

(17 citation statements)

References 3 publications

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“…Further, the use of shunt capacitive loading at the FET ports is unfeasible for reducing the size of the SE DFDA. This is quite different from the CDA, where FET input and output capacitances are normally absorbed into the gate and drain line, since the electrical separation between FETs is small [25]. In this case, m is 7 for both input and output ATLs.…”

Section: Introductionmentioning

confidence: 92%

Compact dual-fed distributed power amplifier

Eccleston

2005

IEEE Trans. Microwave Theory Techn.

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Abstract-The dual-fed distributed amplifier (DFDA) allows efficient combining of field-effect transistors (FETs) at the device level without using -way power combiners. However, the FETs must be spaced 180 , resulting in physically large circuits. In this paper, meandered artificial transmission lines (TLs) comprised of microstrip lines periodically loaded with short open-circuit stubs can be used in place of TLs to reduce the size. The approach incorporates FET input and output capacitances with the artificial TLs, thereby eliminating their detrimental effects on bandwidth and performance. Both simulation and experimental results of a class-A three-FET single-ended DFDA designed to operate at 1.8 GHz demonstrate the feasibility of this approach and the validity of the design method. The size reduction is approximately one-third compared to realization using microstrip lines only, and the maximum efficiency is greater than 35% over a bandwidth of 15%.Index Terms-Distributed amplifiers, microstrip circuits, microwave field-effect transistor (FET) amplifiers, microwave power FET amplifiers.

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Section: Introductionmentioning

confidence: 92%

Compact dual-fed distributed power amplifier

Eccleston

2005

IEEE Trans. Microwave Theory Techn.

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“…, Z d and Z g and knowing the number of stages n, the equation for the RF-gain G presented by Ayasli et al [3] can be applied, written down, slightly adapted for the complex transconductance, in the following equation:…”

Section: I C I R C U I T a N A L Y S I S A N D D E S I G Nmentioning

confidence: 99%

“…The TWA principle, first introduced by Percival [1] and Ginzton et al [2], was at the beginning envisaged for circuit realizations by means of vacuum tubes, discrete inductors, and capacitors. Ayasli et al [3] and Beyer et al [4] developed the original equations set further for the accommodation of the structural conditions that arise when implementing TWAs in GaAs FET technology. With the high substrate resistance of GaAs, the parasitic losses associated with the inductors could be neglected and the dominant loss factor reducing the RF gain versus frequency was the input gate source resistance R gs .…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of an efficient, fully integrated 1–8 GHz traveling wave power amplifier in 180 nm CMOS

Carls

Ellinger

Zhang

et al. 2009

Int. J. Microw. Wireless Technol.

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Traveling wave amplifiers (TWAs) offer the advantage of broadband amplification and a closed set of equations that allow deriving the RF gain by means of treating TWAs as discrete transmission line approximations. Up to now, however, the significant losses associated with CMOS integrated inductors have been neglected. This work presents a new approach for determining the transmission line losses and phase constants that will bring about an enhanced gain prediction accuracy. The theory is verified by means of a realized design example. The working principle of the integrated DC supply inductor is discussed, whose performance is based on the inductors self-resonance effect. When applying a supply voltage V dd of 2.4 V, the measured compression point P 1dB and the power added efficiency PAE at 2.4 GHz amount to 16.9 dBm and 19.6%, respectively. At 5.5 GHz, a value of 16.6 dBm for P 1dB and an associated PAE of 13.9% are achieved. The peak RF gain for these output power values reaches 11 dB, and values greater than 8 dB are obtained up to 7 GHz. I . I N T R O D U C T I O NA trend that is developing in recent years is the requirement for mobile RF frontends to accommodate several RF transmission standards. From a power amplifier (PA) perspective, multi-standard signal transmission at frequencies of 2.4 GHz (802.15.1) up to 5.725 GHz (802.11.x) requires broadband amplifiers such as e.g. traveling wave amplifiers (TWAs). The TWA principle, first introduced by Percival [1] and Ginzton et al. [2], was at the beginning envisaged for circuit realizations by means of vacuum tubes, discrete inductors, and capacitors. Ayasli et al. [3] and Beyer et al. [4] developed the original equations set further for the accommodation of the structural conditions that arise when implementing TWAs in GaAs FET technology. With the high substrate resistance of GaAs, the parasitic losses associated with the inductors could be neglected and the dominant loss factor reducing the RF gain versus frequency was the input gate source resistance R gs . Given this background, the developed equation sets were satisfactorily adequate to predict the achievable gain bandwidth product (GBW) of TWAs.With the rise of CMOS integration as the major circuit technology nowadays, this, unfortunately, is no longer the case. Parasitic series and parallel losses associated with the integrated inductors significantly influence the overall circuit behavior. This is particularly true for TWA architectures, which heavily rely on integrated inductors to approximate the input and output transmission lines.In this work, we propose a practical analytical solution for TWA architectures that incorporates the dominant loss factors of CMOS integrated inductors. A discrete transmission line model is presented that comprises resistive, capacitive, and inductive effects occurring in CMOS TWA realizations. Based on this model, the associated transmission line damping factor and phase constant are calculated and used for the derivation of the small signal gain. The RF gain is the...

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“…Therefore, the oscillation frequency given by (14) is approximately times larger than that of a lumped oscillator with a tank inductance and capacitance of values and , respectively. 3) , where is the cutoff frequency of the loaded transmission line and represents the frequency at which no signal travels along the transmission line. This implies that for a given frequency, a larger number of smaller transistors (larger ), and hence a smaller section length , would result in a higher to ratio and hence a frequency and amplitude closer to those predicted by (14)- (16).…”

Section: B Distributed Oscillatorsmentioning

confidence: 99%