This paper describes a time-domain electrothermal model for the microwave and RF p-i-n diode showing its usefulness in the design of PIN diode-based RF attenuator circuits over wide ambient temperature changes. The paper provides an overview of thermal variations on RF attenuation in PIN diode circuits and verifies this phenomenon with measurements on a series-reflective attenuator. These measured results compare favorably with the electrothermal model and provide circuit designers the insight needed to simulate and design temperature compensation circuits in timedomain simulators such as SPICE.